IRFP27N60K Vishay, IRFP27N60K Datasheet - Page 5

• Manufacturer Part Number: IRFP27N60K
• Description: N CHANNEL MOSFET, 600V, 27A, TO-247
• Manufacturer: Vishay

Specifications of IRFP27N60K

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 27A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 220mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 5V
• Configuration: Single
• Resistance Drain-source Rds (on): 0.22 Ohms
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 27 A
• Power Dissipation: 500 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-247AC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Document Number: 91219
S11-0487-Rev. C, 21-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Fig. 9 - Maximum Drain Current vs. Case Temperature
30
25
20
15
10
5
0
25
0.001
0.01
0.1
0.00001
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
50
T , Case Temperature (°C)
C
75
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
(THERMAL RESPONSE)
0.0001
SINGLE PULSE
100
This datasheet is subject to change without notice.
125
t , Rectangular Pulse Duration (s)
1
150
0.001
IRFP27N60K, SiHFP27N60K
0.01
90 %
10 %
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
V
V
1. Duty factor D =
2. Peak T
DS
Notes:
GS
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
G
10 V
V
GS
t
d(on)
J
= P
V
DS
DM
t
r
x Z
t / t
1
0.1
thJC
P
2
DM
D.U.T.
+ T
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R
Vishay Siliconix
C
D
t
1
t
d(off)
t
2
t
f
+
-
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V
DD
1
5