PSMN7R0-60YS NXP Semiconductors, PSMN7R0-60YS Datasheet - Page 9

• Manufacturer Part Number: PSMN7R0-60YS
• Description: MOSFET,N CH,60V,89A,LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN7R0-60YS

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 4.95mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: SOT-669
• Rohs Compliant: Yes

NXP Semiconductors
PSMN7R0-60YS_2
Product data sheet
Fig 13. Drain-source on-state resistance as a function
Fig 15. Gate-source voltage as a function of gate
(mΩ)
R
V
DSon
(V)
GS
10
10
9
8
7
6
5
4
8
6
4
2
0
of drain current; typical values
charge; typical values
0
0
20
12V
20
V
48V
GS
40
(V) = 5
60
40
V
Q
80
DS
All information provided in this document is subject to legal disclaimers.
003aae063
G
003aae061
= 30V
(nC)
I
D
5.5
6.5
10
(A)
8
6
100
60
Rev. 02 — 30 March 2010
N-channel LFPAK 60 V 6.4 mΩ standard level MOSFET
Fig 14. Gate charge waveform definitions
Fig 16. Drain-source on-state resistance as a function
(pF)
C
10
10
10
4
3
2
10
of drain current; typical values
V
-1
V
V
V
GS(pl)
DS
GS(th)
GS
Q
GS1
1
I
Q
PSMN7R0-60YS
D
GS
Q
GS2
Q
G(tot)
Q
GD
10
© NXP B.V. 2010. All rights reserved.
V
DS
003a a e 060
003aaa508
C
C
C
(V)
os s
is s
rs s
10
2
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