PSMN7R0-60YS NXP Semiconductors, PSMN7R0-60YS Datasheet - Page 8

• Manufacturer Part Number: PSMN7R0-60YS
• Description: MOSFET,N CH,60V,89A,LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN7R0-60YS

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 4.95mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: SOT-669
• Rohs Compliant: Yes

NXP Semiconductors
PSMN7R0-60YS_2
Product data sheet
Fig 9.
Fig 11. Gate-source threshold voltage as a function of
V
GS(th)
(V)
(A)
I
D
100
80
60
40
20
5
4
3
2
1
0
0
−60
function of drain-source voltage; typical values
junction temperature
Output characteristics: drain current as a
0
10
0.5
6.5
0
6 5.5
60
1
max
min
typ
120
1.5
V
GS
5
All information provided in this document is subject to legal disclaimers.
003aae056
V
003aad280
T
(V) = 4.5
j
DS
(°C)
(V)
4.8
4.6
180
Rev. 02 — 30 March 2010
2
N-channel LFPAK 60 V 6.4 mΩ standard level MOSFET
Fig 10. Sub-threshold drain current as a function of
Fig 12. Normalized drain-source on-state resistance
(A)
I
10
10
10
10
10
10
D
a
2.4
1.6
1.2
0.8
0.4
−1
−2
−3
−4
−5
−6
2
0
gate-source voltage
-60
factor as a function of junction temperature.
0
0
2
PSMN7R0-60YS
min
60
typ
4
120
max
V
© NXP B.V. 2010. All rights reserved.
GS
003aad696
T
j
(V)
(°C)
03aa35
180
6
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