PSMN7R0-40LS NXP Semiconductors, PSMN7R0-40LS Datasheet - Page 7

• Manufacturer Part Number: PSMN7R0-40LS
• Description: MOSFET,N CH,40V,40A,QFN3333
• Manufacturer: NXP Semiconductors

Specifications of PSMN7R0-40LS

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 5.6mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: QFN
• Rohs Compliant: Yes

NXP Semiconductors
PSMN7R0-40LS
Product data sheet
Fig 9.
Fig 11. Sub-threshold drain current as a function of
(pF)
(A)
I
2000
1500
1000
10
10
10
10
10
10
D
C
500
−1
−2
−3
−4
−5
−6
0
function of gate-source voltage, typical values
gate-source voltage
V
Input and reverse transfer capacitances as a
0
0
DS
C
C
= 0 V; f = 1 MHz
iss
rss
2
2
4
min
typ
6
4
max
V
All information provided in this document is subject to legal disclaimers.
8
GS
003aae525
V
003aae487
GS
(V)
(V)
10
Rev. 2 — 18 August 2010
6
N-channel QFN3333 40 V 7.0 mΩ standard level MOSFET
Fig 10. Gate-source threshold voltage as a function of
Fig 12. Normalized drain-source on-state resistance
V
GS(th)
(V)
a
1.5
0.5
2
1
0
5
4
3
2
1
0
−60
-60
junction temperature
factor as a function of junction temperature
0
0
PSMN7R0-40LS
max
min
typ
60
60
120
120
© NXP B.V. 2010. All rights reserved.
T
003aae486
003aae527
T
j
j
(°C)
( ° C)
180
180
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