PSMN7R0-40LS NXP Semiconductors, PSMN7R0-40LS Datasheet - Page 6

• Manufacturer Part Number: PSMN7R0-40LS
• Description: MOSFET,N CH,40V,40A,QFN3333
• Manufacturer: NXP Semiconductors

Specifications of PSMN7R0-40LS

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 5.6mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: QFN
• Rohs Compliant: Yes

NXP Semiconductors
Table 6.
PSMN7R0-40LS
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
(S)
g
(A)
60
40
20
I
fs
40
D
30
20
10
0
0
drain current; typical values
function of gate-source voltage; typical values
T
Forward transconductance as a function of
V
Transfer characteristics: drain current as a
0
0
j
DS
Characteristics
= 25°C; V
= 10 V
Parameter
source-drain voltage
reverse recovery time
recovered charge
10
DS
2
= 10 V
T
…continued
j
20
= 175 °C
4
30
V
T
Conditions
I
see
I
V
GS
All information provided in this document is subject to legal disclaimers.
S
S
j
003aae520
DS
003aae518
= 25 °C
I
D
= 17 A; V
= 30 A; dI
(V)
(A)
Figure 17
= 20 V
40
Rev. 2 — 18 August 2010
6
GS
S
/dt = -100 A/µs; V
= 0 V; T
N-channel QFN3333 40 V 7.0 mΩ standard level MOSFET
Fig 6.
Fig 8.
j
= 25 °C;
R
(mΩ)
DSon
(A)
I
D
50
40
30
20
10
20
16
12
0
8
4
0
function of drain-source voltage; typical values
of gate-source voltage; typical values
T
Output characteristics: drain current as a
T
Drain-source on-state resistance as a function
GS
0
4
j
j
= 25°C and t
= 25°C; I
7.0
10
= 0 V;
0.5
8
D
6.0
= 10 A
PSMN7R0-40LS
p
= 300 μs
Min
-
-
-
12
1
V
GS
(V) = 5.5
Typ
0.85
26.2
18.8
1.5
16
© NXP B.V. 2010. All rights reserved.
V
003aae521
V
003aae519
GS
DS
Max
1.2
-
-
(V)
(V)
4.6
5.0
4.8
4.5
4.4
4.2
20
2
Unit
V
ns
nC
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