PSMN3R3-40YS NXP Semiconductors, PSMN3R3-40YS Datasheet - Page 8

• Manufacturer Part Number: PSMN3R3-40YS
• Description: MOSFET,N CH,40V,100A,LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN3R3-40YS

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 2.6mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: SOT-669
• Rohs Compliant: Yes

NXP Semiconductors
PSMN3R3-40YS
Product data sheet
Fig 9.
Fig 11. Sub-threshold drain current as a function of
(mΩ)
R
(A)
DSon
I
10
10
10
10
10
10
D
25
20
15
10
−1
−2
−3
−4
−5
−6
5
0
of gate-source voltage; typical values.
gate-source voltage
Drain-source on-state resistance as a function
0
4
8
2
min
12
typ
4
16
max
V
All information provided in this document is subject to legal disclaimers.
GS
V
003aae217
GS
(V)
03aa35
(V)
Rev. 04 — 25 October 2010
20
6
N-channel LFPAK 40 V 3.3 mΩ standard level MOSFET
Fig 10. Gate-source threshold voltage as a function of
Fig 12. Normalized drain-source on-state resistance
V
GS(th)
(V)
1.5
0.5
a
5
4
3
2
1
0
2
1
0
−60
-60
junction temperature
factor as a function of junction temperature
0
0
PSMN3R3-40YS
60
60
max
min
typ
120
120
© NXP B.V. 2010. All rights reserved.
003aad280
T
T
j
j
03ne89
(°C)
( ° C)
180
180
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