PSMN3R3-40YS NXP Semiconductors, PSMN3R3-40YS Datasheet - Page 10
![MOSFET,N CH,40V,100A,LFPAK](/photos/22/17/221780/756424404-40_sml.jpg)
PSMN3R3-40YS
Manufacturer Part Number
PSMN3R3-40YS
Description
MOSFET,N CH,40V,100A,LFPAK
Manufacturer
NXP Semiconductors
Datasheet
1.PSMN3R3-40YS115.pdf
(15 pages)
Specifications of PSMN3R3-40YS
Transistor Polarity
N Channel
Drain Source Voltage Vds
40V
On Resistance Rds(on)
2.6mohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
20V
Operating Temperature Range
-55°C To +175°C
Transistor Case
RoHS Compliant
Transistor Case Style
SOT-669
Rohs Compliant
Yes
NXP Semiconductors
PSMN3R3-40YS
Product data sheet
Fig 17. Source current as a function of source-drain voltage; typical values
(A)
I
S
100
80
60
40
20
0
0
All information provided in this document is subject to legal disclaimers.
Rev. 04 — 25 October 2010
0.3
T
j
= 175 °C
N-channel LFPAK 40 V 3.3 mΩ standard level MOSFET
0.6
T
j
0.9
= 25 °C
V
003aae219
SD
(V)
1.2
PSMN3R3-40YS
© NXP B.V. 2010. All rights reserved.
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