PSMN3R3-40YS NXP Semiconductors, PSMN3R3-40YS Datasheet - Page 5

• Manufacturer Part Number: PSMN3R3-40YS
• Description: MOSFET,N CH,40V,100A,LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN3R3-40YS

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 2.6mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: SOT-669
• Rohs Compliant: Yes

NXP Semiconductors
5. Thermal characteristics
Table 5.
PSMN3R3-40YS
Product data sheet
Symbol
R
Fig 4.
th(j-mb)
Z
(K/W)
th(j-mb)
10
10
10
-1
-2
-3
1
10
values
Transient thermal impedance from junction to mounting base as a function of pulse duration; typical
-6
δ = 0.5
0.02
Thermal characteristics
0.1
0.05
single shot
0.2
Parameter
thermal resistance from junction to
mounting base
10
-5
All information provided in this document is subject to legal disclaimers.
10
-4
Rev. 04 — 25 October 2010
N-channel LFPAK 40 V 3.3 mΩ standard level MOSFET
10
Conditions
see
-3
Figure 4
10
-2
PSMN3R3-40YS
Min
-
10
P
-1
t
Typ
0.54
p
T
t
p
© NXP B.V. 2010. All rights reserved.
(s)
003aae210
δ =
Max
1.28
t
T
p
t
1
Unit
K/W
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