SUM110N04-2M1P-E3 Vishay, SUM110N04-2M1P-E3 Datasheet - Page 4

• Manufacturer Part Number: SUM110N04-2M1P-E3
• Description: N CHANNEL MOSFET, 40V, 11A, TO-263
• Manufacturer: Vishay

Specifications of SUM110N04-2M1P-E3

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 11A
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 2.4mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: 2.5V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +150°C
• Transistor: RoHS Compliant
• Transistor Case Style: TO-263
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.0021 Ohms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 29 A
• Power Dissipation: 3.13 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TO-263
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

SUM110N04-2m1P
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.010
0.008
0.006
0.004
0.002
0.000
2.0
1.7
1.4
1.1
0.8
0.5
- 50
0
On-Resistance vs. Gate-to-Source Voltage
I
D
On-Resistance vs. Junction Temperature
= 30 A
- 25
2
V
T
GS
0
J
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
25
4
50
1000
0.01
100
0.1
V
10
GS
1
6
75
0.1
= 10 V
Limited by R
* V
Safe Operating Area, Junction-to-Ambient
100
T
V
T
J
GS
J
GS
Single Pulse
= 150 °C
= 25 °C
T
8
C
= 4.5 V
> minimum V
125
= 25 °C
V
DS
DS(on)
New Product
- Drain-to-Source Voltage (V)
150
1
10
*
GS
at which R
10
BVDSS
DS(on)
is specified
- 0.2
- 0.6
- 1.0
0.001
0.01
0.6
0.2
100
0.1
10
- 50
1
0.0
10 µs
100 µs
1 ms
10 ms
100 ms, DC
100
T
Forward Diode Voltage vs. Temperature
- 25
J
= 150 °C
0.2
V
SD
0
- Source-to-Drain Voltage (V)
T
Threshold Voltage
0.4
J
- Temperature (°C)
25
0.6
50
S-80680-Rev. A, 31-Mar-08
Document Number: 69983
75
T
I
0.8
J
D
= 25 °C
= 250 µA
100
I
D
1.0
= 5 mA
125
150
1.2