IRF7807ZPBF International Rectifier, IRF7807ZPBF Datasheet - Page 7

• Manufacturer Part Number: IRF7807ZPBF
• Description: N CHANNEL MOSFET, 30V, 11A, SOIC
• Manufacturer: International Rectifier
• Type: Power MOSFETr

Specifications of IRF7807ZPBF

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 11A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 13.8mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1.8V
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 18.2 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 11 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8
• Fall Time: 3.1 ns
• Gate Charge Qg: 7.2 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 6.2 ns
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.0138Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

www.irf.com

‚
+
R
-
D.U.T
ƒ
Fig 15.
+
-
•
•
•
•
SD
•
•
•
Vgs(th)
Qgs1 Qgs2
Vds
-
„
G
Fig 16. Gate Charge Waveform
HEXFET
+
V
Qgd
®
+
-
Power MOSFETs
Re-Applied
Voltage
Reverse
Recovery
Current
Qgodr
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
V
P.W.
SD
= 5V for Logic Level Devices
DS
Waveform
Waveform
Ripple ≤ 5%
for N-Channel
Body Diode
Period
Body Diode Forward
Diode Recovery
Current
Vgs
dv/dt
Forward Drop
di/dt
Id
D =
Period
P.W.
V
V
I
SD
GS
DD
=10V
7