IRF7807ZPBF International Rectifier, IRF7807ZPBF Datasheet - Page 4

• Manufacturer Part Number: IRF7807ZPBF
• Description: N CHANNEL MOSFET, 30V, 11A, SOIC
• Manufacturer: International Rectifier
• Type: Power MOSFETr

Specifications of IRF7807ZPBF

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 11A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 13.8mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1.8V
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 18.2 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 11 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8
• Fall Time: 3.1 ns
• Gate Charge Qg: 7.2 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 6.2 ns
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.0138Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

4
10000
100.0
1000
10.0
100
10
1.0
0.1
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
1
0.4
Drain-to-Source Voltage
T J = 150°C
V DS , Drain-to-Source Voltage (V)
V SD , Source-toDrain Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
Forward Voltage
0.6
Coss
Crss
Ciss
0.8
T J = 25°C
f = 1 MHZ
10
1.0
V GS = 0V
1.2
1.4
100
1000
100
0.1
Fig 8. Maximum Safe Operating Area
12
10
10
8
6
4
2
0
1
0.1
Fig 6. Typical Gate Charge Vs.
0
Tc = 25°C
Tj = 150°C
Single Pulse
I D = 8.8A
Gate-to-Source Voltage
V DS , Drain-toSource Voltage (V)
Q G Total Gate Charge (nC)
1.0
4
OPERATION IN THIS AREA
LIMITED BY R DS (on)
V DS = 24V
VDS= 15V
10.0
8
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100µsec
1msec
10msec
100.0
12
1000.0
16