IRF7807ZPBF International Rectifier, IRF7807ZPBF Datasheet - Page 6

• Manufacturer Part Number: IRF7807ZPBF
• Description: N CHANNEL MOSFET, 30V, 11A, SOIC
• Manufacturer: International Rectifier
• Type: Power MOSFETr

Specifications of IRF7807ZPBF

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 11A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 13.8mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1.8V
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 18.2 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 11 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8
• Fall Time: 3.1 ns
• Gate Charge Qg: 7.2 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 6.2 ns
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.0138Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Fig 12a. Unclamped Inductive Test Circuit
6
Fig 12b. Unclamped Inductive Waveforms
Fig 13. Gate Charge Test Circuit
I
AS
12V
V
GS
R G
20V
Same Type as D.U.T.
V
V DS
GS
Current Regulator
.2µF
t p
50KΩ
3mA
I AS
Current Sampling Resistors
D.U.T
t p
.3µF
0.01 Ω
L
I
G
D.U.T.
15V
I
V
D
(BR)DSS
DRIVER
+
-
V
+
-
DS
V DD
A
300
250
200
150
100
50
90%
V
10%
0
V
Fig 14a. Switching Time Test Circuit
DS
Fig 14b. Switching Time Waveforms
25
GS
Fig 12c. Maximum Avalanche Energy
Starting T J , Junction Temperature (°C)
t
d(on)
50
Duty Factor < 0.1%
Pulse Width < 1µs
Vs. Drain Current
V
GS
t
r
75
V
DS
t
100
d(off)
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D.U.T
L
t
D
f
125
V
DD
+
-
150