IRF7807ZPBF International Rectifier, IRF7807ZPBF Datasheet

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... Junction-to-Ambient R θJA Notes  through „ are on page 10 www.irf.com V DSS 13.8m @V 30V Top View @ 10V GS @ 10V Typ. ––– f ––– IRF7807ZPbF HEXFET Power MOSFET R max Qg(typ.) DS(on) = 10V 7.2nC SO-8 Max. Units 30 V ± 8 2.5 W 1.6 0.02 W/° ...

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Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V Gate Threshold Voltage Coefficient GS(th) I ...

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PULSE WIDTH Tj = 25° Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 150°C 10 25° 15V ...

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0V MHZ C iss = SHORTED C rss = oss = 1000 Ciss Coss Crss 100 10 ...

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Junction Temperature (°C) Fig 9. Maximum Drain Current Vs. Case Temperature 100 D = 0.50 0.20 10 0.10 0.05 1 0.02 0.01 0.1 0.01 SINGLE PULSE ...

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D.U 20V GS 0.01 Ω Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ .2µF 12V ...

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D.U.T + ƒ • • - • + ‚ -  R • • • SD • Fig 15. Vds Vgs(th) Qgs1 Qgs2 www.irf.com Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse „ Recovery Current - + D.U.T. V ...

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Power MOSFET Selection for Non-Isolated DC/DC Converters Control FET loss conduction switching drive This can be expanded and approximated by × loss rms ds(on ) ⎛ ...

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SO-8 Package Outline Dimensions are shown in millimeters (inches & " YÃi !$Ãb dà IPU@T) ÃÃ9DH@ITDPIDIBÃÉÃUPG@S6I8DIBÃQ@SÃ6TH@Ã` #$H ((# !ÃÃ8PIUSPGGDIBÃ9DH@ITDPI)ÃHDGGDH@U@S "ÃÃ9DH@ITDPITÃ6S@ÃTCPXIÃDIÃHDGGDH@U@STÃbDI8C@Td #ÃÃPVUGDI@Ã8PI PSHTÃUPÃE@9@8ÃPVUGDI@ÃHT !66 ...

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SO-8 Tape and Reel Dimensions are shown in milimeters (inches) TERMINAL NUMBER 1 8.1 ( .318 ) 7.9 ( .312 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & ...