IRF7807ZPBF International Rectifier, IRF7807ZPBF Datasheet - Page 5

• Manufacturer Part Number: IRF7807ZPBF
• Description: N CHANNEL MOSFET, 30V, 11A, SOIC
• Manufacturer: International Rectifier
• Type: Power MOSFETr

Specifications of IRF7807ZPBF

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 11A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 13.8mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1.8V
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 18.2 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 11 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8
• Fall Time: 3.1 ns
• Gate Charge Qg: 7.2 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 6.2 ns
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.0138Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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0.001
0.01
100
0.1
10
12
10
Fig 9. Maximum Drain Current Vs.
1
8
6
4
2
0
1E-006
25
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
D = 0.50
Case Temperature
0.20
0.10
0.05
0.02
0.01
T J , Junction Temperature (°C)
50
1E-005
SINGLE PULSE
( THERMAL RESPONSE )
75
0.0001
100
125
t 1 , Rectangular Pulse Duration (sec)
0.001
150
0.01
Fig 10. Threshold Voltage Vs. Temperature
τ
J
τ
J
τ
2.2
2.0
1.8
1.6
1.4
1.2
1.0
1
Ci= τi/Ri
τ
1
Ci= i/Ri
-75
R
1
R
1
-50
0.1
τ
2
τ
R
-25
2
2
R
2
T J , Temperature ( °C )
0
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
R
τ
3
3
R
τ
3
3
1
25
τ
C
τ
Ri (°C/W)
5.770
24.37
19.86
50
I D = 250µA
75
10
100
7.25
0.002691
0.54585
τi (sec)
125
5
150
100