HY27UF082G2B-TPCB HYNIX SEMICONDUCTOR, HY27UF082G2B-TPCB Datasheet - Page 54

• Manufacturer Part Number: HY27UF082G2B-TPCB
• Description: IC, MEMORY, FLASH NAND 2GB, TSOP48
• Manufacturer: HYNIX SEMICONDUCTOR

Specifications of HY27UF082G2B-TPCB

• Access Time: 20ns
• Supply Voltage Range: 2.7V To 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 48
• Operating Temperature Range: 0°C To +70°C
• Package / Case: TSOP
• Base Number: 27
• Interface: Serial
• Logic: RoHS Compliant
• Memory Type: Flash - NAND
• Memory Configuration: 256M X 8
• Rohs Compliant: Yes

MARKING INFORMATION -
Rev 0.2 / Jan. 2008
- h y n ix
- K O R
- H Y 2 7 U F x x 2 G 2 B x x x x
- Y : Y e ar (ex: 5 = ye ar 2 0 0 5 , 6= ye a r 2 0 0 6 )
- w w : W o rk W eek (e x: 12 = w ork w eek 12 )
- x x : P roce ss C o d e
N o te
- C a p ita l L e tte r
- S m a ll L e tte r
H Y : H yn ix
2 7 : N A N D Fla sh
U : P o w e r S u p p ly
F : C la ssifica tion
x x : B it O rga n izatio n
2 G : D e n sity
2 : M o de
B : V e rsion
x : P acka ge T yp e
x : P acka ge M a te ria l
x : O p eratin g T e m perature
x : B ad B lo ck
P a ck a g
T S O P 1
U L G A
F B G A
/
/
H
x
Y
x
TSOP1 / FBGA / ULGA
2
x
: H yn ix S ym bo l
: O rig in C ou n try
: P a rt N u m b er
: U (2 .7 V ~ 3 .6 V )
: S in g le Leve l C e ll+ S in g le D ie + Larg e B lo ck
: 0 8 (x8 ), 1 6 (x1 6 )
: 2 G b it
: 2 (1 n C E & 1 R /n B ; S e q u e n tia l R o w R e a d D isa ble )
: 3 rd G e n era tion
: T (4 8-T S O P 1 ), F (6 3 -FB G A ), U (5 2 -U LG A )
: B la n k(N orm a l), P (Le a d Fre e )
: C (0 ℃ ~ 7 0℃ ), I(-4 0℃ ~ 8 5 ℃ )
: B (In clu de d B a d B lock ), S (1 ~ 5 B a d B lock ),
: Fixe d Ite m
: N on -fixe d Ite m
P (A ll G o od B lo ck)
7
x
M a rk in g E x a m p le
U
F
2Gbit (256Mx8bit) NAND Flash
x
HY27UF(08/16)2G2B Series
Y
x
W
2
W
G
K
O
2
x
R
B
x
54