HY27UF082G2B-TPCB HYNIX SEMICONDUCTOR, HY27UF082G2B-TPCB Datasheet - Page 22

• Manufacturer Part Number: HY27UF082G2B-TPCB
• Description: IC, MEMORY, FLASH NAND 2GB, TSOP48
• Manufacturer: HYNIX SEMICONDUCTOR

Specifications of HY27UF082G2B-TPCB

• Access Time: 20ns
• Supply Voltage Range: 2.7V To 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 48
• Operating Temperature Range: 0°C To +70°C
• Package / Case: TSOP
• Base Number: 27
• Interface: Serial
• Logic: RoHS Compliant
• Memory Type: Flash - NAND
• Memory Configuration: 256M X 8
• Rohs Compliant: Yes

Rev 0.2 / Jan. 2008
CLE Setup time
CLE Hold time
CE setup time
CE hold time
WE pulse width
ALE setup time
ALE hold time
Data setup time
Data hold time
Write Cycle time
WE High hold time
Data Transfer from Cell to register
ALE to RE Delay
CLE to RE Delay
Ready to RE Low
RE Pulse Width
WE High to Busy
Read Cycle Time
RE Access Time
RE High to Output High Z
CE High to Output High Z
CE High to Output hold
RE High to Output Hold
RE Low to Output Hold
RE High Hold Time
Output High Z to RE low
CE Low to RE Low
Address to data loading time
WE High to RE low
RE High to WE low
Device Resetting Time (Read / Program / Erase)
Write Protection time
NOTE:
1. If Reset Command (FFh) is written at Ready state, the device goes into Busy for maximum 5us
2. Program / Erase Enable Operation : WP high to WE High.
Program / Erase Disable Operation : WP Low to WE High.
Parameter
Table 13: AC Timing Characteristics
Symbol
2Gbit (256Mx8bit) NAND Flash
t
t
t
t
t
t
t
t
WW
t
t
t
t
t
RHOH
t
t
t
t
t
t
t
RLOH
t
t
WHR
RHW
t
t
t
t
t
t
t
t
RHZ
CHZ
COH
REH
t
ADL
CLH
ALH
CLR
REA
RST
CLS
ALS
WC
WH
t
WB
WP
DH
CS
CH
DS
AR
RR
RP
RC
CR
IR
R
(2)
HY27UF(08/16)2G2B Series
Min
100
100
12
20
12
12
12
25
10
10
10
20
12
25
15
15
10
10
70
60
5
5
5
5
5
0
3.3V
5/10/500
Max
100
100
25
20
50
(1)
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
us
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
us
ns
22