HY27UF082G2B-TPCB HYNIX SEMICONDUCTOR, HY27UF082G2B-TPCB Datasheet - Page 47
![IC, MEMORY, FLASH NAND 2GB, TSOP48](/photos/19/5/190513/42334033_sml.jpg)
HY27UF082G2B-TPCB
Manufacturer Part Number
HY27UF082G2B-TPCB
Description
IC, MEMORY, FLASH NAND 2GB, TSOP48
Manufacturer
HYNIX SEMICONDUCTOR
Datasheet
1.HY27UF082G2B-TPCB.pdf
(54 pages)
Specifications of HY27UF082G2B-TPCB
Access Time
20ns
Supply Voltage Range
2.7V To 3.6V
Memory Case Style
TSOP
No. Of Pins
48
Operating Temperature Range
0°C To +70°C
Package / Case
TSOP
Base Number
27
Interface
Serial
Logic
RoHS Compliant
Memory Type
Flash - NAND
Memory Configuration
256M X 8
Rohs Compliant
Yes
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Company
Part Number
Manufacturer
Quantity
Price
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Quantity:
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1
HY27UF(08/16)2G2B Series
2Gbit (256Mx8bit) NAND Flash
Bad Block Management
Devices with Bad Blocks have the same quality level and the same AC and DC characteristics as devices where all the
blocks are valid. A Bad Block does not affect the performance of valid blocks because it is isolated from the bit line and
common source line by a select transistor. The devices are supplied with all the locations inside valid blocks
erased(FFh). The Bad Block Information is written prior to shipping. Any block where the 1st Byte in the spare area of
the 1st or 2nd th page (if the 1st page is Bad) does not contain FFh is a Bad Block. The Bad Block Information must be
read before any erase is attempted as the Bad Block Information may be erased. For the system to be able to recog-
nize the Bad Blocks based on the original information it is recommended to create a Bad Block table following the flow-
chart shown in Figure 31. The 1st block, which is placed on 00h block address is guaranteed to be a valid block.
Figure 31: Bad Block Management Flowchart
Rev 0.2 / Jan. 2008
47