HY27UF082G2B-TPCB HYNIX SEMICONDUCTOR, HY27UF082G2B-TPCB Datasheet - Page 24

• Manufacturer Part Number: HY27UF082G2B-TPCB
• Description: IC, MEMORY, FLASH NAND 2GB, TSOP48
• Manufacturer: HYNIX SEMICONDUCTOR

Specifications of HY27UF082G2B-TPCB

• Access Time: 20ns
• Supply Voltage Range: 2.7V To 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 48
• Operating Temperature Range: 0°C To +70°C
• Package / Case: TSOP
• Base Number: 27
• Interface: Serial
• Logic: RoHS Compliant
• Memory Type: Flash - NAND
• Memory Configuration: 256M X 8
• Rohs Compliant: Yes

Rev 0.2 / Jan. 2008
(Without Spare Area)
(Without Spare Area)
Between multiple chips
Serial Access Time
(Byte / 512Byte)
Programmed Pages
Interleave program
Spare Area Size
Organization
Simultaneously
Die / Package
Block Size
Page Size
Write Cache
Number of
Cell Type
Table 18: 4th Byte of Device Identifier Description
Table 17: 3rd Byte of Device Idendifier Description
1KB
2KB
4KB
8KB
8
16
50ns
30ns
25ns
Reserved
64K
128K
256K
512KB
X8
X16
1
2
4
8
2 Level Cell
4 Level Cell
8 Level Cell
16 Level Cell
1
2
4
8
Not
Supported
Not
Supported
Description
Description
IO7
0
0
1
1
IO7
0
1
IO6
0
1
IO6
0
1
IO5-4
2Gbit (256Mx8bit) NAND Flash
0 0
0 1
1 0
1 1
HY27UF(08/16)2G2B Series
IO5 IO4
0 0
0 1
1 0
1 1
IO3
0
1
0
1
IO3 IO2
0 0
0 1
1 0
1 1
IO2
0
1
IO1 IO0
IO1-0
0 0
0 1
1 0
1 1
0 0
0 1
1 0
1 1
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