2ED020I12-FI Infineon Technologies, 2ED020I12-FI Datasheet - Page 8

• Manufacturer Part Number: 2ED020I12-FI
• Description: IC, IGBT DRIVER, DUAL, PG-DSO-18-2
• Manufacturer: Infineon Technologies
• Type: MOSFET/IGBT Driverr

Specifications of 2ED020I12-FI

• Device Type: IGBT
• Module Configuration: High Side
• Peak Output Current: 2A
• Input Delay: 85ns
• Output Delay: 85ns
• Supply Voltage Range: 14V To 18V
• Driver Case Style: SO
• No. Of Pins: 18
• Operating: RoHS Compliant
• Product: Half-Bridge Drivers
• Rise Time: 40 ns
• Fall Time: 35 ns
• Supply Voltage (min): 14 V
• Supply Current: 2.3 mA
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Package / Case: PG-DSO-18-2
• Minimum Operating Temperature: - 40 C
• Number Of Drivers: 2
• Number Of Outputs: 2
• Output Current: 5 mA
• Output Voltage: 5.3 V
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

4
4.1
The power supply of both sides, “VSL” and “VSH”, is monitored by an undervoltage
lockout block (UVLO) which enables operation of the corresponding side when the
supply voltage reaches the “on” threshold. Afterwards the internal voltage reference and
the biasing circuit are enabled. When the supply voltage (VSL, VSH) drops below the
“off” threshold, the circuit is disabled.
4.2
The logic inputs InH, InL and SD are fed into Schmitt-Triggers with thresholds compatible
to 3.3V and 5V TTL. When SD is enabled (low), InH and InL are disabled. If InH is high
(while InL is low), OutH is enabled and vice versa. However, if both signals are high, they
are internally disabled until one of them gets low again. This is due to the interlocking
logic of the device. See Figure 3 (section 4.7).
4.3
2ED020I12-FI features two hard-switching gate drivers with N-channel output stages
capable to source 1A and to sink 2A peak current. Both drivers are equipped with active-
low-clamping capability. Furthermore, they feature a large ground bounce ruggedness
in order to compensate ground bounces caused by a turn-off of the driven IGBT.
4.4
This general purpose operational amplifier can be applied for current measurement of
the driven low-side IGBT. It is dedicated for fast operation with a gain of at least 3. The
OP is equipped with a -0.1 to 2V input stage and a rail-to-rail output stage which is
capable to drive
4.5
The general purpose comparator can be applied for overcurrent detection of the low side
IGBT. A dedicated offset as well as a pull-up and pull-down resistor has been introduced
to its inputs for security reasons.
4.6
In order to enable signal transmission across the isolation barrier between low-side and
high-side driver, a transformer based on CLT-Technology is employed. Signals, that are
to be transmitted, are specially encoded by the transmitter and correspondingly restored
by the receiver. In this way EMI due to variations of GNDH (dV
flux density (d /dt) can be suppresed.To compensate the additional propagation delay
Final Datasheet
Functional Description
Power Supply
Logic Inputs
Gate Driver
General Purpose Operational Amplifier
General Purpose Comparator
Coreless Transformer (CLT)
5mA.
Final Data
8
High and Low Side Driver
Functional Description
GNDH
/dt) or the magnetic
2ED020I12-FI
September 2007