2ED020I12-FI Infineon Technologies, 2ED020I12-FI Datasheet - Page 16

• Manufacturer Part Number: 2ED020I12-FI
• Description: IC, IGBT DRIVER, DUAL, PG-DSO-18-2
• Manufacturer: Infineon Technologies
• Type: MOSFET/IGBT Driverr

Specifications of 2ED020I12-FI

• Device Type: IGBT
• Module Configuration: High Side
• Peak Output Current: 2A
• Input Delay: 85ns
• Output Delay: 85ns
• Supply Voltage Range: 14V To 18V
• Driver Case Style: SO
• No. Of Pins: 18
• Operating: RoHS Compliant
• Product: Half-Bridge Drivers
• Rise Time: 40 ns
• Fall Time: 35 ns
• Supply Voltage (min): 14 V
• Supply Current: 2.3 mA
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Package / Case: PG-DSO-18-2
• Minimum Operating Temperature: - 40 C
• Number Of Drivers: 2
• Number Of Outputs: 2
• Output Current: 5 mA
• Output Voltage: 5.3 V
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

General Purpose Operational Amplifier OP (cont’d)
Parameter
OP input low currents
(OP–, OP+)
OP high output voltage V
OP low output voltage
OP output source
current
OP output sink current
OP open loop gain
OP gain-bandwidth
product
OP phase margin
1)
2)
General Purpose Comparator CP
Parameter
CP input offset voltage
CP input high current
CP input low current
CP low output voltage
CP output leakage
current
Final Datasheet
Design value
Due to inevitable parasitics a minimal gain of 3 is recommended
2)
Symbol
I
V
I
I
A
A x BW
Symbol
I
I
V
I
IN
OPO
OPO
CP–
CP+
CPO
V
OPO
OPO
OL
CPO
Final Data
IN
min.
– 0.2
4.9
5
min.
–45
–35
—
—
—
—
—
—
—
—
Limit Values
Limit Values
16
typ
0
typ
120
–30
–20
20
70
20
—
—
—
—
—
—
max.
0.1
– 5
max.
–15
35
0.2
5
—
—
—
—
—
—
—
High and Low Side Driver
Unit
V
V
mA
mA
dB
MHz
°
Unit
mV
V
A
A
A
A
Electrical Parameters
V
V
V
V
V
V
V
V
V
V
V
1)
1)
Test Condition
V
V
V
V
I
V
V
V
Test Condition
CPO
IN
OP–
OP+
OP–
OP+
OP+
OP–
OPO
OP+
OP–
OPO
CP+
CP–
CP+
CP+
CP+
CP–
CPO
= 0 V
2ED020I12-FI
= 1 mA
= 2 V
September 2007
= 0 V
= 2 V
= 0 V
= 2 V
= V
= 5V
= 0 V
= 2 V
= 0 V
= 2 V
= 0 V
= 2 V
= 0 V
= 5 V
= 0 V
= 5 V
CP-