2ED020I12-FI Infineon Technologies, 2ED020I12-FI Datasheet - Page 14

• Manufacturer Part Number: 2ED020I12-FI
• Description: IC, IGBT DRIVER, DUAL, PG-DSO-18-2
• Manufacturer: Infineon Technologies
• Type: MOSFET/IGBT Driverr

Specifications of 2ED020I12-FI

• Device Type: IGBT
• Module Configuration: High Side
• Peak Output Current: 2A
• Input Delay: 85ns
• Output Delay: 85ns
• Supply Voltage Range: 14V To 18V
• Driver Case Style: SO
• No. Of Pins: 18
• Operating: RoHS Compliant
• Product: Half-Bridge Drivers
• Rise Time: 40 ns
• Fall Time: 35 ns
• Supply Voltage (min): 14 V
• Supply Current: 2.3 mA
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Package / Case: PG-DSO-18-2
• Minimum Operating Temperature: - 40 C
• Number Of Drivers: 2
• Number Of Outputs: 2
• Output Current: 5 mA
• Output Voltage: 5.3 V
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Gate Drivers
Parameter
High side high level
output voltage
High side low level
output voltage
Low side high level
output voltage
Low side low level
output voltage
Output high peak
current (OutL, OutH)
Output low peak current
(OutL, OutH)
High side active low
clamping
Low side active low
clamping
1)
Dynamic Characteristics
Parameter
Turn-on propagation
delay
Final Datasheet
With reference to high side ground GNDH.
Symbol
V
V
V
V
V
V
I
I
V
V
Symbol
t
Out
Out
ON
VSH
OutH
OutH
VSL
OutL
OutL
OutH
OutL
Final Data
–
1)
1)
–
min.
2
min.
—
—
—
—
—
—
—
—
—
—
—
Limit Values
Limit Values
14
typ
typ
85
95
1.4
1.4
2.6
2.7
2.6
2.7
—
—
—
—
max.
1.7
0.1
1.7
0.1
– 1
max.
105
120
3.2
3.2
—
3
3
High and Low Side Driver
Unit
V
V
V
V
A
A
V
V
V
V
Unit
ns
ns
Electrical Parameters
Test Condition
I
V
I
V
I
V
I
V
V
V
V
V
InH =0V, VSH open
I
InH =0V, VSH open
I
T
InL =0V, VSL open
I
InL =0V, VSL open
I
T
Test Condition
GNDH = 0 V
20% V
GNDH = 0 V
20% V
T
OutH
OutH
OutL
OutL
OutH
OutH
OutL
OutL
J
J
J
InH
InH
InL
InL
IN
Out
IN
Out
= 125 °C
= 125 °C
= 125 °C
= 5 V
= 0 V
2ED020I12-FI
= 5V
= 0V
= 5V
= 0V
= –1mA
= 1mA
=200mA
=200mA
= 0 V
= 15 V
= –1mA
= 1mA
=200mA
=200mA
September 2007
out
out