NTE65101 NTE ELECTRONICS, NTE65101 Datasheet - Page 3

IC, SRAM, 1KBIT, SERIAL, 450NS, 22-DIP

NTE65101

Manufacturer Part Number
NTE65101
Description
IC, SRAM, 1KBIT, SERIAL, 450NS, 22-DIP
Manufacturer
NTE ELECTRONICS
Datasheet

Specifications of NTE65101

Memory Size
1Kbit
Memory Configuration
256 X 4
Access Time
450ns
Supply Voltage Range
4.75V To 5.25V
Memory Case Style
DIP
No. Of Pins
22
Operating Temperature Range
-40°C To +85°C
AC Operating Conditions and Characteristics (Cont’d): (Full operating voltage and temperature
Read Cycle:
Read Cycle (Cont’d):
Write Cycle:
Truth Table:
Read Cycle Time
Access Time
Address Setup Time
Address Hold Time
Chip Enable (CE1) to Output
Chip Enable (CE2) to Output
Output Disable to Output
Data Output to High Z State
Previous Read Data Valid with Respect to Address Change
Previous Read Data Valid with Respect to Chip Enable
Write Cycle
Write Delay
Chip Enable (CE1) to Write
Chip Enable (CE2) to Write
Data Setup
Data Hold
Write Pulse
Write Recovery
Output Disable Setup
CE1
H
X
X
L
L
L
CE2
X
X
H
H
H
L
OD
H
H
X
X
L
L
Parameter
Parameter
Parameter
R/W
X
X
H
H
L
L
D
X
X
X
X
X
X
in
unless otherwise specified)
Output
High Z
High Z
High Z
High Z
D
D
out
in
Symbol Min
Symbol Min
Symbol Min
t
t
t
t
t
t
t
t
t
t
t
CW1
CW2
t
t
t
t
t
t
CO1
CO2
t
OH1
OH2
WC
AW
DW
WP
WR
RC
OD
DH
t
AS
AH
DF
DS
A
Output Disable
Not Selected
Not Selected
450
450
130
350
350
250
250
130
Mode
Read
Write
Write
20
50
50
0
0
0
0
Max Unit
Max Unit
Max Unit
450
400
500
250
130
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns

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