NTE2107 NTE ELECTRONICS, NTE2107 Datasheet

NTE2107

Manufacturer Part Number

NTE2107

Description

IC, DRAM, 4KBIT, DIP-16

Manufacturer

NTE ELECTRONICS

Datasheet

1.NTE2107.pdf (4 pages)

Specifications of NTE2107

Memory Type

DRAM - NMOS

Memory Configuration

4K X 1

Access Time

200ns

Page Size

4Kbit

Memory Case Style

DIP

No. Of Pins

Operating Temperature Range

0Â°C To +70Â°C

Mounting Type

Through Hole

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Description:

The NTE2107 is a 4096 word by 1 bit dynamic random access memory (RAM) that incorporates the

latest memory design features and can be used in a wide variety of applications, from those which

require very high speed to ones where low cost and large bit capacity are the primary criteria.

The NTE2107 must be refreshed every 2ms. This can be accomplished by performing a read cycle

at each of the 64 row addresses (A0 − A5). The chip select input can be either high or low for refresh.

This device has been designed with minimum production costs as a prime criterion. It is fabricated

using N−channel silicon gate MOS technology, which is an ideal choice for high density integrated

circuits. The NTE2107 uses a single transistor cell to minimize the device area. The single cell, along

with unique design features in the on−chip peripheral circuits, yeilds a high performance memory de-

vice.

Features:

D Organization: 4096 x 1

D Access Time: 200ns Min

D Cycle Time: 400ns Min

D Easy System Interface:

D Address Registers On−Chip

D Simple Read−Modify−Write Operation

D Industry Standard Pin Configuration

Absolute Maximum Ratings: (Note 1)

All Input or Output Voltages with Respect to the Most Negative Supply Voltage, V

Supply Voltages V

Power Dissipation, P

Operating Temperature Range, T

Storage Temperature Range, T

Note 1. “Absolute Maximum Ratings” are those values beyond which the safety of the device cannot

Recommended Operating Conditions:

Operating Temperature Range

Voltage

be guaranteed. Except for “Operating Temperature Range” they are not meant to imply that

the devices should be operated at these limits. The table of “Electrical Characteristics” pro-

vides conditions for actual device operation.

One High Voltage Input − Chip Enable

TTL Compatible − All Other Inputs and Outputs

, V

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

, and V

NMOS, 4K Dynamic RAM (DRAM)

stg

Parameter

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

with Respect to V

Integrated Circuit

NTE2107

. . . . . . . . . . . . . . . . . . . . . . . . . .

10.8

−5.5

Min

4.5

. . . .

Typ

−

−65° to +150°C

−0.3 to +25V

−0.3 to +20V

Max

13.2

−4.5

0° to +70°C

5.5

1.25W

Unit

°C

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NTE2107 Summary of contents

Page 1

... NMOS, 4K Dynamic RAM (DRAM) Description: The NTE2107 is a 4096 word by 1 bit dynamic random access memory (RAM) that incorporates the latest memory design features and can be used in a wide variety of applications, from those which require very high speed to ones where low cost and large bit capacity are the primary criteria. ...

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NTE2107 NTE ELECTRONICS, NTE2107 Datasheet

NTE2107

Specifications of NTE2107

Related parts for NTE2107

NTE2107 Summary of contents

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