Description:
The NTE2107 is a 4096 word by 1 bit dynamic random access memory (RAM) that incorporates the
latest memory design features and can be used in a wide variety of applications, from those which
require very high speed to ones where low cost and large bit capacity are the primary criteria.
The NTE2107 must be refreshed every 2ms. This can be accomplished by performing a read cycle
at each of the 64 row addresses (A0 − A5). The chip select input can be either high or low for refresh.
This device has been designed with minimum production costs as a prime criterion. It is fabricated
using N−channel silicon gate MOS technology, which is an ideal choice for high density integrated
circuits. The NTE2107 uses a single transistor cell to minimize the device area. The single cell, along
with unique design features in the on−chip peripheral circuits, yeilds a high performance memory de-
vice.
Features:
D Organization: 4096 x 1
D Access Time: 200ns Min
D Cycle Time: 400ns Min
D Easy System Interface:
D Address Registers On−Chip
D Simple Read−Modify−Write Operation
D Industry Standard Pin Configuration
Absolute Maximum Ratings: (Note 1)
All Input or Output Voltages with Respect to the Most Negative Supply Voltage, V
Supply Voltages V
Power Dissipation, P
Operating Temperature Range, T
Storage Temperature Range, T
Note 1. “Absolute Maximum Ratings” are those values beyond which the safety of the device cannot
Recommended Operating Conditions:
V
V
V
Operating Temperature Range
DD
CC
BB
Voltage
Voltage
Voltage
be guaranteed. Except for “Operating Temperature Range” they are not meant to imply that
the devices should be operated at these limits. The table of “Electrical Characteristics” pro-
vides conditions for actual device operation.
One High Voltage Input − Chip Enable
TTL Compatible − All Other Inputs and Outputs
DD
D
, V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CC
, and V
NMOS, 4K Dynamic RAM (DRAM)
stg
A
SS
Parameter
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
with Respect to V
Integrated Circuit
NTE2107
BB
. . . . . . . . . . . . . . . . . . . . . . . . . .
10.8
−5.5
Min
4.5
0
BB
. . . .
Typ
−
−
−
−
−65° to +150°C
−0.3 to +25V
−0.3 to +20V
Max
13.2
−4.5
0° to +70°C
5.5
70
1.25W
Unit
°C
V
V
V