NTE21256 NTE ELECTRONICS, NTE21256 Datasheet
NTE21256
Specifications of NTE21256
Related parts for NTE21256
NTE21256 Summary of contents
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... In addition to the usual read, write, and read–modify–write cycles, the NTE21256 is capable of early and late write cycles, RAS–only refresh, and hidden refresh. Common I/O capability is given by using early write operation. The NTE21256 also features page mode which allows high–speed random access of bits in the same row. Features: D 262,144 x 1– ...
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... Device Initialization Since the NTE21256 is a dynamic RAM with a single +5V supply, no power sequencing is required. For power–up, an initial pause of 200 s is necessary for the internal bias generator to establish the proper substrate bias voltage. To initialize the nodes of the dynamic circuitry, a minimum of 8 active cycles of the Row Address Strobe (RAS) has to be performed ...
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DC Characteristics + Parameter Input High Voltage (All Inputs) Input Low Voltage (All Inputs) Output High Voltage Output Low Voltage Average V Supply Current CC Standby V Supply Current CC Average V Supply ...
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AC Characteristics + otherwise specified) Parameter Random Read or Write Cycle Time Read–Modify–Write Cycle Time Access Time from RAS Access Time from CAS RAS Pulse Width CAS Pulse Width Refresh Period RAS Precharge ...
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AC Characteristics (Cont’d): (T Parameter Write Command Setup Time Write Command Hold Time Write Command Hold Time referenced to RAS Write Command Pulse Width Write Command to RAS Lead Time Write Command to CAS Lead Time Data in Setup Time ...
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RAS .785 (19.9) Max .245 (6.22) Min .100 (2.54) .700 (17.7) Pin Connection Diagram CAS ...