NTE2117 NTE ELECTRONICS, NTE2117 Datasheet
NTE2117
Specifications of NTE2117
Related parts for NTE2117
NTE2117 Summary of contents
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... Dynamic Random Access Memory (RAM) Description: The NTE2117 is a new generation MOS dynamic random access memory circuit in a 16−Lead DIP type package organized as 16,384 x 1−bit and incorporates advanced circuit techniques designed to provide wide operating margins, both internally and to the system user, while achieving higher per- formance levels in both speed and power. System oriented features include ± ...
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Note 1. Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the ...
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Note 6. I and I depend upon output loading. During readout of high level data V CC1 CC4 nected through a low impedance (135Ω Typ) to data out. At all other times I leakage currents only. Electrical Characteristics and Recommended ...
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Parameter CAS to WRITE Delay RAS to WRITE Delay Note specified here for operation at frequencies rates with reduced ambient temperatures and higher power dissipation is permissible, how- ever, provided AC operating parameters are ...
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Pin Connection Diagram WRITE RAS VDD .870 (22.0) Max .100 (2.54) .700 (17.78 CAS 14 D OUT 13 A6 ...