NTE2104 NTE ELECTRONICS, NTE2104 Datasheet
NTE2104
Specifications of NTE2104
Related parts for NTE2104
NTE2104 Summary of contents
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Description: The NTE21256 is a 262,144 word by 1–bit dynamic Random Access Memory. This 5V–only component is fabricated with N–channel silicon gate technology. Nine multiplexed address inputs permit the NTE21256 to be packaged in an industry standard 16–Lead DIP package. ...
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Device Initialization Since the NTE21256 is a dynamic RAM with a single +5V supply, no power sequencing is required. For power–up, an initial pause of 200 s is necessary for the internal bias generator to establish the proper substrate bias ...
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DC Characteristics + Parameter Input High Voltage (All Inputs) Input Low Voltage (All Inputs) Output High Voltage Output Low Voltage Average V Supply Current CC Standby V Supply Current CC Average V Supply ...
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AC Characteristics + otherwise specified) Parameter Random Read or Write Cycle Time Read–Modify–Write Cycle Time Access Time from RAS Access Time from CAS RAS Pulse Width CAS Pulse Width Refresh Period RAS Precharge ...
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AC Characteristics (Cont’d): (T Parameter Write Command Setup Time Write Command Hold Time Write Command Hold Time referenced to RAS Write Command Pulse Width Write Command to RAS Lead Time Write Command to CAS Lead Time Data in Setup Time ...
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RAS .785 (19.9) Max .245 (6.22) Min .100 (2.54) .700 (17.7) Pin Connection Diagram CAS ...