M24LR64-RMN6/2 STMicroelectronics, M24LR64-RMN6/2 Datasheet - Page 116
M24LR64-RMN6/2
Manufacturer Part Number
M24LR64-RMN6/2
Description
EEPROM, 64K, DUAL INTERFACE, 8SOIC
Manufacturer
STMicroelectronics
Datasheet
1.M24LR64-RDW62.pdf
(128 pages)
Specifications of M24LR64-RMN6/2
Memory Size
64Kbit
Clock Frequency
400kHz
Access Time
900ns
Supply Voltage Range
1.8V To 5V
Memory Case Style
SOIC
No. Of Pins
8
Operating Temperature Range
-40°C To +85°C
Svhc
No SVHC
Memory Configuration
8192 X 8, 2048 X 32
Interface Type
I2C, Serial, 2-Wire
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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RF DC and AC parameters
29
Table 105. RF AC characteristics
1. T
2. All timing measurements were performed between 0 °C and 50 °C on a reference antenna with the following
3. Characterized only, not 100% tested
4. 15% (or more) carrier modulation index offers a better signal/noise ratio and therefore a wider operating range with a better
116/128
H_Extended
MI
MI
t
t
RFR
RFR
Symbol
characteristics:
External size: 75 mm x 48 mm
Number of turns: 5
Width of conductor: 5 mm
Space between 2 conductors: 0.3 mm
Value of the tuning capacitor in SO8: 27.5 pF (M24LR64-R)
Value of the coil: 5 µH
Tuning frequency: 13.56 MHz.
noise immunity
t
H_ISO
t
t
MIN CD
CARRIER
CARRIER
RFSBL
RFSBL
A
f
t
f
f
W
CC
JIT
SH
SL
t
t
= –40 to 85 °C.
, t
, t
1
2
t
RFF
RFF
RF DC and AC parameters
This section summarizes the operating and measurement conditions, and the DC and AC
characteristics of the device in RF mode. The parameters in the DC and AC Characteristic
tables that follow are derived from tests performed under the Measurement Conditions
summarized in the relevant tables. Designers should check that the operating conditions in
their circuit match the measurement conditions when relying on the quoted parameters.
External RF signal frequency
Operating field according to ISO
Operating field in extended
temperature range
10% carrier modulation index
MI=(A-B)/(A+B)
10% rise and fall time
10% minimum pulse width for bit
100% carrier modulation index
100% rise and fall time
100% minimum pulse width for bit
Bit pulse jitter
Minimum time from carrier
generation to first data
Subcarrier frequency high
Subcarrier frequency low
Time for M24LR64-R response
Time between commands
RF write time (including internal
Verify)
Parameter
(1) (2)
(3) (4)
Doc ID 15170 Rev 11
T
T
A
A
150 mA/m > H_ISO > 1000
= 0 °C to 50 °C
= –40 °C to 85 °C
H_ISO > 1000 mA/m
From H-field min
MI=(A-B)/(A+B)
Condition
4224/F
4224/F
F
F
mA/m
CC
CC
/32
/28
S
S
13.553 13.56 13.567 MHz
150
150
318.6
Min
309
0.5
7.1
0.5
7.1
15
10
95
-2
423.75
484.28
320.9
311.5
5.75
Typ
0.1
5000
3500
M24LR64-R
323.3
Max
9.44
9.44
100
314
3.0
3.5
30
30
+2
1
mA/
m
mA/
m
Unit
kHz
kHz
ms
ms
µs
µs
µs
µs
µs
µs
µs
%
%
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