NTE21256 NTE ELECTRONICS, NTE21256 Datasheet - Page 3

• Manufacturer Part Number: NTE21256
• Description: IC, DRAM, 256KBIT, DIP-16
• Manufacturer: NTE ELECTRONICS

Specifications of NTE21256

• Memory Type: DRAM - NMOS
• Memory Configuration: 256 X 1
• Access Time: 150ns
• Page Size: 256Kbit
• Memory Case Style: DIP
• No. Of Pins: 16
• Operating Temperature Range: 0°C To +70°C
• Supply Voltage: 5V
• Mounting Type: Through Hole

DC Characteristics: (T
Note 2. All voltages referenced to V
Note 3. Overshooting and undershooting on input levels of +6.5V or –2V for a period 0f 30ns Max.
Note 4. I
Note 5. I
Note 6. I
Note 7. RAS and CAS are both at V
Capacitance: (Note 6)
Note 6. Effective capacitance calculated from the equation:
AC Test Conditions:
Input Pulse Levels
Input Rise and Fall Times
Input Timing Reference Levels
Output Timing Reference Levels
Output Load
Input High Voltage (All Inputs)
Input Low Voltage (All Inputs)
Output High Voltage
Output Low Voltage
Average V
Standby V
Average V
Average V
Input Leakage Current (Any Input)
Output Leakage Current
Supply Voltage
Input Capacitance (A0–A8, DI)
Input Capacitance (RAS, CAS, WE)
Output Capacitance (DO, CAS = V
RAS–only refresh cycles
Page Mode
will influence function and reliability of the device.
rate.
C =
OH
OL
CC
CC
CC
CC
CC
Supply Current
Supply Current
Supply Current during
supply Current during
= 4mA and 100pf load.
depends on frequency of operation. Maximum current is measured at the fastest cycle
= 4mA and 100pf load.
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Parameter
I
V
t
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Parameter
with V = 3V or measured with Boonton meter.
A
= 0 to +70 C, V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
IH
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
to disable output)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
SS
IH
Symbol
.
.
I
V
I
I
I
I
V
V
I
V
V
O (L)
V
CC1
CC2
CC3
CC4
I (L)
OH
OL
CC
SS
IH
IL
SS
= 0V, V
Notes 2, Note3
Notes 2, Note3
Note 4
Note 5
t
Note 7
Note 6
Note 6
CAS at Logic 1, 0
Note 2
RC
= 260ns, Note 6
Symbol
Test Conditions
C
C
C
equivelent to 2 standard TTL loads and 100pf
CC
I1
I2
O
= +5V 10% unless otherwise specified)
Test Conditions
V out
5.5
5ns between 0.8 and 2.4V
–1.0
Min
2.4
2.4
4.5
–
–
–
–
–
–
–
0
Min
–
–
–
Typ
–
–
–
–
–
–
–
–
–
–
–
–
Typ
–
–
–
V
Max
CC
0.8
0.4
5.5
70
65
55
10
10
0.8 to 2.4V
0.4 to 2.4V
–
5
0
Max Unit
6
7
7
0 to 3.0V
+1
Unit
mA
mA
mA
mA
pF
pF
pF
V
V
V
V
V
V
A
A