IDTTSE2002B3CNRG IDT, Integrated Device Technology Inc, IDTTSE2002B3CNRG Datasheet

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IDTTSE2002B3CNRG

Manufacturer Part Number
IDTTSE2002B3CNRG
Description
IC TEMP SENS EEPROM DFN-8
Manufacturer
IDT, Integrated Device Technology Inc

Specifications of IDTTSE2002B3CNRG

Function
Temp Monitoring System (Sensor)
Topology
ADC (Sigma Delta), Control Logic, Register Bank
Sensor Type
Internal
Sensing Temperature
-20°C ~ 125°C
Output Type
2-Wire Serial, I²C™/SMBUS™
Output Alarm
No
Output Fan
No
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
-20°C ~ 125°C
Mounting Type
Surface Mount
Package / Case
8-VFDFN Exposed Pad
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Description
The TSE2002B3C digital temperature sensor with accuracy up to
±0.5°C was designed to target applications demanding highest level of
temperature readout. The device also contains 256 Byte EEPROM for
storage of vendor information and system configuration such as SPD for
DIMM modules. The sensor and the EEPROM are fully compliant with
JEDEC JC42.4 Component Specification.
The digital temperature sensor comes with several user-programmable
registers to provide maximum flexibility for temperature-sensing
applications. The registers allow specifying critical, upper, and lower
temperature limits as well as hysteresis settings. Both the limits and
hysteresis values are used for communicating temperature events from
the chip to the system. This communication is done using Event pin,
which has an open-drain configuration. The user has the option of setting
the Event pin polarity as either an active-low or active-high comparator
output for thermostat operation, or as a temperature event interrupt
output for microprocessor-based systems.
The sensor uses an industry standard 2-wire, I2C/SMBus serial
interface, and allows up to eight devices to be controlled on the bus.
The 2Kbit (256 Bytes) serial EEPROM memory in the part is organized
as a single block. Half the bytes in memory locations 00h to 7Fh can be
permanently locked with user defined or vendor defined information. The
protected data could also contain system information such as access
speed, size, and organization. The 128 bytes in addresses from 80h to
FFh can be used for general purpose data storage. These addresses are
not write-protected.
Memory Module Temp Sensor Application
© 2010 Integrated Device Technology, Inc.
Chipset
CPU
MCH
Memory Bus
(for memory
EVENT#
throttling)
SMBus
IDT and the IDT logo are registered trademarks of Integrated Device Technology, Inc.
®
Temperature Sensor with
Integrated EEPROM for Memory
Modules
*Notice: The information in this document is subject to change without notice
Temperature
sensor and
Memory
EEPROM
DRAMs
DRAMs
Module
1 of 30
Features
Temperature Sensor Features
Serial EEPROM Features
Typical Applications
– Active mode for Temp sensor and EEPROM
– EEPROM in standby or Temp sensor in shutdown
– EEPROM in standby and Temp sensor in shutdown
- Meets strict SMBus spec of 25ms (min), 35ms (max)
Temperature Sensor + 256 Byte Serial EEPROM
256 Byte Serial EEPROM for SPD
Single Supply: 3V to 3.6V
Accurate timeout support
Timeout supported for Temp Sensor and EEPROM
Timeout supported in all Modes
Schmitt trigger and noise filtering on bus inputs
2-wire Serial Interface: 10-400 kHz I2C™ /SMBus™
Available Packages: DFN-8, TDFN-8
Temperature Converted to Digital Data
Sampling Rate of 100ms (max)
Selectable 0, 1.5°C, 3°C, 6°C Hysteresis
Programmable Resolution from 0.0625°C to 0.5°C
Accuracy:
Permanent and Reversible Software Write Protect
Software Write Protection for the lower 128 bytes
Byte and page write (up to 16 bytes)
Self-time Write cycle
Automatic address incrementing
Organized as 1 block of 256 bytes (256x8)
DIMM Modules (DDR2, DDR3)
Servers, Laptops, Ultra-portables, PCs, etc.
High end audio / video equipment
Industrial temperature monitors
Hard Disk Drives and Other PC Peripherals
±0.5°C/±1°C (typ./max.) from -20°C to +125°C
Advance Information*
IDT Confidential
TSE2002B3C
Data Sheet
May 12, 2010
DSC 7210/17

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IDTTSE2002B3CNRG Summary of contents

Page 1

Description The TSE2002B3C digital temperature sensor with accuracy up to ±0.5°C was designed to target applications demanding highest level of temperature readout. The device also contains 256 Byte EEPROM for storage of vendor information and system configuration such as ...

Page 2

Block Diagram: Temperature Sensor with EEPROM Temperature Registers T UPPER T LOWER Chipset T CRIT Resolution Capability and ID Registers Temperature Range Accuracy Event Feature Resolution Support Manufacturer ID Device ID Configuration Registers Resolution Hysteresis Event Status Event Polarity Event ...

Page 3

Maximum Ratings Stressing the device above the rating listed in the Absolute Maximum Ratings table may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those ...

Page 4

AC Measurement Conditions Symbol Parameter C Load capacitance L Input rise and fall times Input levels Input and output timing reference levels AC Measurement I/O Waveform Input Parameters for the TSE2002B3C 1,2 Symbol Parameter C Input capacitance (SDA ...

Page 5

DC Characteristics Parameter Input Leakage Current (SCL, SDA) Output Leakage Current Supply Current, temp sensor converting, EEPROM write Supply Current, temp sensor shut down, EEPROM write Supply Current, temp sensor shut down, EEPROM read Supply Current, temp sensor converting, EEPROM ...

Page 6

AC Characteristics Parameter Clock Frequency Clock Pulse Width High Time Clock Pulse Width Low Time Detect clock low timeout, Capabilities Register bit 6 =1 SDA Rise Time SDA Fall Time Data In Setup Time Data In Hold Time Data Out ...

Page 7

Temperature-to-Digital Conversion Performance Parameter Temperature Sensor Accuracy (exceeds JEDEC B-grade < V < V DDSPDMIN DDSPD Temperature Conversion Time Resolution ADC Setting 0.5°C 0.25°C (POR default) 0.125°C 0.0625°C AC Waveforms Min Typ Max Unit ±0.5 ±1.0 °C -20°C ...

Page 8

Pin Assignment 1 SA0 SA1 3 6 SA2 SSSPD Pin Description Pin # Pin Name 1 SA0 2 SA1 3 SA2 4 V SSSPD 5 SDA 6 SCL 7 EVENT 8 V DDSPD Pin ...

Page 9

Maximum R Value vs. Bus Capacitance (C L Select Address (SA0, SA1, SA2) These input signals are used to set the value that looked for on the three least significant bits (b3, b2, b1) of the 7-bit ...

Page 10

EVENT Pin Mode Functionality Serial Communications The SPD section of the TSE2002B3C Kbit serial EEPROM organized as a 256 byte memory. The device is able to lock permanently the data in the lower sector (from location 0x00 ...

Page 11

Device Diagram Device Interface The TSE2002B3C behaves as a slave device in the I operations are initiated by a START condition, generated by the bus master. The START condition is followed by a Device Select Code and R/W# bit 2 ...

Page 12

I C Bus Protocol Start Condition Start is identified by a falling edge of Serial Data (SDA) while Serial Clock (SCL) is stable in the High state. A Start condition must precede any data transfer command. The device continuously ...

Page 13

No Acknowledge Bit (NACK) The no-acknowledge bit is used to indicate the completion of a block read operation attempt to modify a write-protected register. The bus master releases Serial Data (SDA) after sending eight bits of data, and ...

Page 14

I C Operating Modes Mode SPD Current Address Read SPD Random Address Read SPD Sequential Read SPD Byte Write SPD Page Write TS Write TS Read Device Reset and Initialization In order to prevent inadvertent Write operations during Power-up, ...

Page 15

Software Write Protect The TSE2002B3C has three software write-protection features, allowing the bottom half of the memory area (addresses 0x00 to 0x7F temporarily or permanently write protected. Software write-protection is handled by three instructions: SWP: Set Write Protection ...

Page 16

Setting the Write Protection Reading Write Protection Status The status of software write protection can be determined using these instructions: Read SWP: Read Write Protection Status • Read PSWP: Read Permanently Set Write Protection Status • Read SWP The controller ...

Page 17

Write Mode Sequences in a Non-Write Protected Area Byte Write After the Device Select Code and the address byte, the bus master sends one data byte. If the addressed location is write-protected, the device replies to the data byte with ...

Page 18

Write Cycle Polling Flowchart Using ACK Read Operations Read operations are performed independent of the software protection state. The device has an internal address counter which is incremented each time a byte is read May 12, 2010 ...

Page 19

Read Mode Sequences Random Address Read A dummy Write is first performed to load the address into this address counter (refer to the Read Mode Sequence figure) but without sending a Stop condition. Then, the bus master sends another Start ...

Page 20

Sequential Read This operation can be used after a Current Address Read or a Random Address Read. The bus master does acknowledge the data byte output, and sends additional clock pulses so that the device continues to output the next ...

Page 21

TS Write Operations Writing to the TSE2002B3C Temperature Register Set is accomplished through a modified block write operation for two (2) data bytes. To maintain compatibility, the 16 bit register is accessed through a pointer register, requiring ...

Page 22

I C Write to Pointer Register Preset Pointer Register Word Read Pointer Write Register Word Read TS Register Set Definition The register set address are shown in the Acknowledge When Writing Data or ...

Page 23

Temperature Register Addresses ADDR R/W Name N/A W Address Pointer 00 R Capabilities 01 R/W Configuration 02 R/W High Limit 03 R/W Low Limit 04 R/W TCRIT Limit 05 R Ambient Temperature 06 R Manufacturer Device/Revision 08 ...

Page 24

TRES Bit Decode TRES[1: 0.5°C (9-bit 0.25°C (10-bit) (default 0.125°C (11-bit 0.0625°C (12-bit) Note: Refer to section Resolution Register on page 28. Bit 2 - RANGE; Indicates the supported temperature ...

Page 25

HYST Bit Decode HYST[1: Disable hysteresis (default 1.5° 3° 6°C Bit 8 – SHDN-Shutdown. The thermal sensing device and A/D converters are disabled to save power, no events will be ...

Page 26

The EVENT pin is active low. The “active” state of the pin will be logical '0'. '1'; The EVENT pin is active high. The “active” state of the pin will be logical '1'. Bit 0 – EVENT_MODE; Controls ...

Page 27

Low Limit Register Low Limit Register ADDR R/W B15/B7 B14/B6 – – The Low Limit Register holds the lower limit for the nominal operating window. When the temperature drops below the Low Limit or rises up ...

Page 28

Manufacturer ID Register Manufacturer ID Register ADDR R/W B15/B7 B14/ R The Manufacturer ID Register holds the PCI SIG number assigned to the specific manufacturer. Device ID/Revision Register Device ID/Revision Register ADDR R/W B15/B7 B14/B6 ...

Page 29

Use in a Memory Module In the Dual Inline Memory Module (DIMM) application, the TSE2002B3C is soldered directly onto the printed circuit module. The three Select Address inputs (SA0, SA1, SA2) must be connected to V DIMM socket (as shown ...

Page 30

Ordering Information XXXX X X TSE Voltage Device Type Temp Range Example: TSE2002B3C NRG8 CORPORATE HEADQUARTERS 6024 Silver Creek Valley Road San Jose, CA 95138 ® XXX Shipping Rev. Package Carrier Tape and Reel 8 NCG - Green ...

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