RC28F256P33TFA NUMONYX, RC28F256P33TFA Datasheet - Page 60

• Manufacturer Part Number: RC28F256P33TFA
• Description: IC FLASH 256MBIT 95NS 64EZBGA
• Manufacturer: NUMONYX
• Series: Axcell™r

Specifications of RC28F256P33TFA

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 256M (16Mx16)
• Speed: 95ns
• Interface: Parallel
• Voltage - Supply: 2.3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 64-EZBGA
• Cell Type: NOR
• Density: 256Mb
• Interface Type: Parallel/Serial
• Boot Type: Top
• Address Bus: 25b
• Operating Supply Voltage (typ): 2.5/3/3.3V
• Operating Temp Range: -40C to 85C
• Package Type: EZBGA
• Sync/async: Async/Sync
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.3V
• Operating Supply Voltage (max): 3.6V
• Word Size: 16b
• Number Of Words: 32M
• Supply Current: 50mA
• Mounting: Surface Mount
• Pin Count: 64
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 902063; 902063; RC28F256P33TF 902063

16.2
Figure 29: Decoder for SCSP Devices
Notes:
1.
2.
Datasheet
60
Package Designator
Product Designator
Device Density
Product Family
RC = 64- Ball Easy BGA, leaded
PC = 64- Ball Easy BGA, lead - free
48F = Numonyx™ Flash Memory Only
P =
0 = No die
4 = 256-Mbit
0 = No die
Numonyx
The “B” parameter is used for Top(Die1)/Bot(Die2) stack option in the 512-Mbit density.
The last digit is randomly assigned to cover packing media and/or features or other specific configuration
®
Axcell™ Flash Memory (P33)
SCSP Products
Table 27: Valid Combinations for Dual- Die Products
RC48F4400P0TB0E*
PC48F4400P0TB0E*
512-Mbit
P
C 4
*
8
F 4 4
0
0
P 0
T
B 0
E
*
Ballout Descriptor
I/ O Voltage , CE# Configuration
Device Features*
Device Details
Parameter Location
V
V
E = 65 nm lithography
0 = Discrete ballout
B = Bottom Parameter
T = Top Parameter
X = Individual Chip Enable(s)
T = Virtual Chip Enable(s)
CC
CCQ
= 2. 3 to 3.6 V
= 2. 3to 3. 6 V
Order Number: 320003-09
.
P33-65nm
Mar 2010