MT47H32M16HR-25E:G Micron Technology Inc, MT47H32M16HR-25E:G Datasheet - Page 49

IC DDR2 SDRAM 512MBIT 84FBGA

MT47H32M16HR-25E:G

Manufacturer Part Number
MT47H32M16HR-25E:G
Description
IC DDR2 SDRAM 512MBIT 84FBGA
Manufacturer
Micron Technology Inc
Type
DDR2 SDRAMr

Specifications of MT47H32M16HR-25E:G

Format - Memory
RAM
Memory Type
DDR2 SDRAM
Memory Size
512M (32Mx16)
Speed
2.5ns
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
0°C ~ 85°C
Package / Case
84-TFBGA
Package
84FBGA
Density
512 Mb
Address Bus Width
15 Bit
Operating Supply Voltage
1.8 V
Maximum Clock Rate
800 MHz
Maximum Random Access Time
0.4 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Power and Ground Clamp Characteristics
Table 24: Input Clamp Characteristics
Figure 19: Input Clamp Characteristics
PDF: 09005aef82f1e6e2
512MbDDR2.pdf - Rev. O 7/09 EN
Voltage Across Clamp (V)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
Power and ground clamps are provided on the following input-only balls: Address balls,
bank address balls, CS#, RAS#, CAS#, WE#, ODT, and CKE.
25
20
15
10
5
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8
Minimum Power Clamp Current
Voltage Across Clamp (V)
(mA)
49
11.0
13.5
16.0
18.2
21.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.1
1.0
2.5
4.7
6.8
9.1
Power and Ground Clamp Characteristics
Micron Technology, Inc. reserves the right to change products or specifications without notice.
512Mb: x4, x8, x16 DDR2 SDRAM
Minimum Ground Clamp Current
©2004 Micron Technology, Inc. All rights reserved.
(mA)
11.0
13.5
16.0
18.2
21.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.1
1.0
2.5
4.7
6.8
9.1

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