MT47H32M16HR-25E:G Micron Technology Inc, MT47H32M16HR-25E:G Datasheet - Page 118
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MT47H32M16HR-25E:G
Manufacturer Part Number
MT47H32M16HR-25E:G
Description
IC DDR2 SDRAM 512MBIT 84FBGA
Manufacturer
Micron Technology Inc
Type
DDR2 SDRAMr
Specifications of MT47H32M16HR-25E:G
Format - Memory
RAM
Memory Type
DDR2 SDRAM
Memory Size
512M (32Mx16)
Speed
2.5ns
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
0°C ~ 85°C
Package / Case
84-TFBGA
Package
84FBGA
Density
512 Mb
Address Bus Width
15 Bit
Operating Supply Voltage
1.8 V
Maximum Clock Rate
800 MHz
Maximum Random Access Time
0.4 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MT47H32M16HR-25E:G
Manufacturer:
ATTICE
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44
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Part Number:
MT47H32M16HR-25E:G
Manufacturer:
MICRON
Quantity:
11 200
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Part Number:
MT47H32M16HR-25E:G
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Micron Technology Inc
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10 000
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MT47H32M16HR-25E:G
Manufacturer:
MICRON
Quantity:
20 000
Figure 73: REFRESH Command-to-Power-Down Entry
Figure 74: ACTIVATE Command-to-Power-Down Entry
PDF: 09005aef82f1e6e2
512MbDDR2.pdf - Rev. O 7/09 EN
Note:
Note:
Command
Command
Address
1. The earliest precharge power-down entry may occur is at T2, which is 1 ×
1. The earliest active power-down entry may occur is at T2, which is 1 ×
CK#
CKE
CK#
CKE
CK
CK
REFRESH command. Precharge power-down entry occurs prior to
fied.
VATE command. Active power-down entry occurs prior to
Valid
Valid
T0
T0
REFRESH
VALID
ACT
T1
T1
118
1 t CK
1 x t CK
Power-down 1
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Power-down 1
entry
entry
NOP
NOP
512Mb: x4, x8, x16 DDR2 SDRAM
T2
T2
t CKE (MIN)
t CKE (MIN)
T3
T3
t
RCD (MIN) being satisfied.
Power-Down Mode
©2004 Micron Technology, Inc. All rights reserved.
Don’t Care
Don’t Care
t
RFC (MIN) being satis-
t
CK after the ACTI-
t
CK after the