MT47H32M16HR-25E:G Micron Technology Inc, MT47H32M16HR-25E:G Datasheet - Page 107

• Manufacturer Part Number: MT47H32M16HR-25E:G
• Description: IC DDR2 SDRAM 512MBIT 84FBGA
• Manufacturer: Micron Technology Inc
• Type: DDR2 SDRAMr

Specifications of MT47H32M16HR-25E:G

• Format - Memory: RAM
• Memory Type: DDR2 SDRAM
• Memory Size: 512M (32Mx16)
• Speed: 2.5ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 85°C
• Package / Case: 84-TFBGA
• Package: 84FBGA
• Density: 512 Mb
• Address Bus Width: 15 Bit
• Operating Supply Voltage: 1.8 V
• Maximum Clock Rate: 800 MHz
• Maximum Random Access Time: 0.4 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 63: Bank Write – with Auto Precharge
PDF: 09005aef82f1e6e2
512MbDDR2.pdf - Rev. O 7/09 EN
DQS, DQS#
Command
Bank select
Address
DQ 6
CK#
CKE
A10
DM
CK
NOP 1
T0
Notes:
Bank x
ACT
RA
RA
T1
t CK
1. NOP commands are shown for ease of illustration; other commands may be valid at
2. BL = 4 and AL = 0 in the case shown.
3. Enable auto precharge.
4. WR is programmed via MR9–MR11 and is calculated by dividing
5. Subsequent rising DQS signals must align to the clock within
6. DI n = data-in from column n; subsequent elements are applied in the programmed order.
7.
8.
these times.
rounding up to the next integer value.
t
t
DSH is applicable during
DSS is applicable during
t RCD
NOP 1
T2
t CH
t CL
WRITE 2
Bank x
Col n
3
T3
WL ± t DQSS (NOM)
WL = 2
NOP 1
t
107
T4
t
DQSS (MAX) and is referenced from CK T6 or T7.
DQSS (MIN) and is referenced from CK T5 or T6.
t WPRE
NOP 1
T5
DI
Micron Technology, Inc. reserves the right to change products or specifications without notice.
n
t RAS
512Mb: x4, x8, x16 DDR2 SDRAM
T5n
t DQSL t DQSH t WPST
NOP 1
5
T6
T6n
Transitioning Data
NOP 1
T7
©2004 Micron Technology, Inc. All rights reserved.
t
DQSS.
t
WR (in ns) by
NOP 1
WR 4
T8
Don’t Care
NOP 1
t
T9
CK and
WRITE
t RP