MT47H32M16HR-25E:G Micron Technology Inc, MT47H32M16HR-25E:G Datasheet - Page 22

• Manufacturer Part Number: MT47H32M16HR-25E:G
• Description: IC DDR2 SDRAM 512MBIT 84FBGA
• Manufacturer: Micron Technology Inc
• Type: DDR2 SDRAMr

Specifications of MT47H32M16HR-25E:G

• Format - Memory: RAM
• Memory Type: DDR2 SDRAM
• Memory Size: 512M (32Mx16)
• Speed: 2.5ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 85°C
• Package / Case: 84-TFBGA
• Package: 84FBGA
• Density: 512 Mb
• Address Bus Width: 15 Bit
• Operating Supply Voltage: 1.8 V
• Maximum Clock Rate: 800 MHz
• Maximum Random Access Time: 0.4 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 7: Thermal Impedance
PDF: 09005aef82f1e6e2
512MbDDR2.pdf - Rev. O 7/09 EN
Die Revision
F
1
Package Substrate
60-ball
84-ball
Note:
2-layer
4-layer
2-layer
4-layer
1. Thermal resistance data is based on a number of samples from multiple lots and should
be viewed as a typical number.
Airflow = 0m/s
Θ JA (°C/W)
71.4
53.6
65.8
50.0
Airflow = 1m/s
Electrical Specifications – Absolute Ratings
22
Θ JA (°C/W)
54.1
44.5
50.4
41.3
Micron Technology, Inc. reserves the right to change products or specifications without notice.
512Mb: x4, x8, x16 DDR2 SDRAM
Airflow = 2m/s Θ JB (°C/W) Θ JC (°C/W)
Θ JA (°C/W)
47.5
40.5
44.3
37.7
©2004 Micron Technology, Inc. All rights reserved.
33.7
33.5
30.7
30.5
5.5
4.1