MT47H32M16HR-25E:G Micron Technology Inc, MT47H32M16HR-25E:G Datasheet - Page 21

IC DDR2 SDRAM 512MBIT 84FBGA

MT47H32M16HR-25E:G

Manufacturer Part Number
MT47H32M16HR-25E:G
Description
IC DDR2 SDRAM 512MBIT 84FBGA
Manufacturer
Micron Technology Inc
Type
DDR2 SDRAMr

Specifications of MT47H32M16HR-25E:G

Format - Memory
RAM
Memory Type
DDR2 SDRAM
Memory Size
512M (32Mx16)
Speed
2.5ns
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
0°C ~ 85°C
Package / Case
84-TFBGA
Package
84FBGA
Density
512 Mb
Address Bus Width
15 Bit
Operating Supply Voltage
1.8 V
Maximum Clock Rate
800 MHz
Maximum Random Access Time
0.4 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Table 6: Temperature Limits
Figure 10: Example Temperature Test Point Location
PDF: 09005aef82f1e6e2
512MbDDR2.pdf - Rev. O 7/09 EN
Parameter
Storage temperature
Operating temperature: commercial
Operating temperature: industrial
Operating temperature: automotive
Notes:
Test point
1. MAX storage case temperature T
2. MAX operating case temperature T
3. Device functionality is not guaranteed if the device exceeds maximum T
4. Both temperature specifications must be satisfied.
5. Operating ambient temperature surrounding the package.
in Figure 10. This case temperature limit is allowed to be exceeded briefly during pack-
age reflow, as noted in Micron technical note TN-00-15, “Recommended Soldering
Parameters.”
in Figure 10.
operation.
Lmm x Wmm FBGA
Width (W)
0.5 (W)
Electrical Specifications – Absolute Ratings
Symbol
0.5 (L)
21
T
T
T
T
T
T
Length (L)
STG
C
C
A
C
A
STG
C
Micron Technology, Inc. reserves the right to change products or specifications without notice.
is measured in the center of the package, as shown
is measured in the center of the package, as shown
Min
512Mb: x4, x8, x16 DDR2 SDRAM
–55
–40
–40
–40
–40
0
Max
150
105
105
85
95
85
©2004 Micron Technology, Inc. All rights reserved.
Units
°C
°C
°C
°C
°C
°C
C
during
2, 3 , 4
Notes
2, 3, 4
2, 3
4, 5
4, 5
1

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