PBSS4032SPN,115 NXP Semiconductors, PBSS4032SPN,115 Datasheet - Page 9

• Manufacturer Part Number: PBSS4032SPN,115
• Description: TRANS ARRAY NPN/PNP 30V SO8
• Manufacturer: NXP Semiconductors

Specifications of PBSS4032SPN,115

• Transistor Type: NPN, PNP
• Current - Collector (ic) (max): 5.7A, 4.8A
• Voltage - Collector Emitter Breakdown (max): 30V
• Vce Saturation (max) @ Ib, Ic: 450mV @ 300mA, 6A / 510mV @ 250mA, 5A
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 250 @ 2A, 2V / 150 @ 2A, 2V
• Power - Max: 2.3W
• Frequency - Transition: 140MHz, 115MHz
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-6400-2; PBSS4032SPN,115

NXP Semiconductors
PBSS4032SPN
Product data sheet
Fig 5.
Fig 7.
V
h
(V)
1000
(1) T
(2) T
(3) T
(1) T
(2) T
(3) T
FE
BE
800
600
400
200
1.2
0.8
0.4
0.0
0
10
10
V
TR1 (NPN): DC current gain as a function of
collector current; typical values
V
TR1 (NPN): Base-emitter voltage as a function
of collector current; typical values
−1
−1
amb
amb
amb
amb
amb
amb
CE
CE
= 2 V
= 2 V
= 100 °C
= 25 °C
= −55 °C
= −55 °C
= 25 °C
= 100 °C
1
1
(1)
(2)
(3)
10
10
(1)
(2)
(3)
10
10
2
2
10
10
All information provided in this document is subject to legal disclaimers.
006aac306
3
006aac308
3
I
I
C
C
(mA)
(mA)
10
10
Rev. 2 — 14 October 2010
4
4
Fig 6.
Fig 8.
V
BEsat
(A)
(V)
I
(1) T
(2) T
(3) T
12.0
C
8.0
4.0
0.0
1.2
1.0
0.8
0.6
0.4
0.2
10
0.0
T
TR1 (NPN): Collector current as a function of
collector-emitter voltage; typical values
I
TR1 (NPN): Base-emitter saturation voltage as
a function of collector current; typical values
−1
C
amb
amb
amb
amb
30 V NPN/PNP low V
/I
B
= 20
= 25 °C
= −55 °C
= 25 °C
= 100 °C
1.0
1
2.0
10
(1)
(2)
(3)
PBSS4032SPN
I
B
(mA) = 70
10
3.0
2
CEsat
56
42
28
14
© NXP B.V. 2010. All rights reserved.
10
4.0
(BISS) transistor
006aac307
006aac309
3
V
I
C
63
49
35
21
CE
7
(mA)
(V)
10
5.0
4
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