PBSS4032SPN,115 NXP Semiconductors, PBSS4032SPN,115 Datasheet - Page 4

• Manufacturer Part Number: PBSS4032SPN,115
• Description: TRANS ARRAY NPN/PNP 30V SO8
• Manufacturer: NXP Semiconductors

Specifications of PBSS4032SPN,115

• Transistor Type: NPN, PNP
• Current - Collector (ic) (max): 5.7A, 4.8A
• Voltage - Collector Emitter Breakdown (max): 30V
• Vce Saturation (max) @ Ib, Ic: 450mV @ 300mA, 6A / 510mV @ 250mA, 5A
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 250 @ 2A, 2V / 150 @ 2A, 2V
• Power - Max: 2.3W
• Frequency - Transition: 140MHz, 115MHz
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-6400-2; PBSS4032SPN,115

NXP Semiconductors
6. Thermal characteristics
PBSS4032SPN
Product data sheet
Table 7.
[1]
[2]
[3]
Symbol
Per transistor
R
R
Per device
R
Fig 1.
th(j-a)
th(j-sp)
th(j-a)
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
Device mounted on a ceramic PCB, Al
(1) Ceramic PCB, Al
(2) FR4 PCB, mounting pad for collector 1 cm
(3) FR4 PCB, standard footprint
Per device: Power derating curves
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
thermal resistance from
junction to ambient
Thermal characteristics
All information provided in this document is subject to legal disclaimers.
P
(W)
Rev. 2 — 14 October 2010
tot
2
3.0
2.0
1.0
0.0
O
−75
3
, standard footprint
−25
(1)
(2)
(3)
2
O
3
, standard footprint.
Conditions
in free air
in free air
25
2
30 V NPN/PNP low V
75
125
T
006aac302
[1]
[2]
[3]
[1]
[2]
[3]
amb
PBSS4032SPN
Min
-
-
-
-
-
-
-
(°C)
175
CEsat
Typ
-
-
-
-
-
-
-
© NXP B.V. 2010. All rights reserved.
(BISS) transistor
Max
170
125
75
40
145
90
55
2
.
Unit
K/W
K/W
K/W
K/W
K/W
K/W
K/W
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