PBSS4032SPN,115 NXP Semiconductors, PBSS4032SPN,115 Datasheet - Page 17

• Manufacturer Part Number: PBSS4032SPN,115
• Description: TRANS ARRAY NPN/PNP 30V SO8
• Manufacturer: NXP Semiconductors

Specifications of PBSS4032SPN,115

• Transistor Type: NPN, PNP
• Current - Collector (ic) (max): 5.7A, 4.8A
• Voltage - Collector Emitter Breakdown (max): 30V
• Vce Saturation (max) @ Ib, Ic: 450mV @ 300mA, 6A / 510mV @ 250mA, 5A
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 250 @ 2A, 2V / 150 @ 2A, 2V
• Power - Max: 2.3W
• Frequency - Transition: 140MHz, 115MHz
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-6400-2; PBSS4032SPN,115

NXP Semiconductors
12. Revision history
Table 10.
PBSS4032SPN
Product data sheet
Document ID
PBSS4032SPN v.2
Modifications:
PBSS4032SPN v.1
Revision history
Release date
20101014
20100714
•
Figure 1 “Per device: Power derating
All information provided in this document is subject to legal disclaimers.
Data sheet status
Product data sheet
Product data sheet
Rev. 2 — 14 October 2010
curves”: updated.
30 V NPN/PNP low V
Change notice
-
-
PBSS4032SPN
Supersedes
PBSS4032SPN v.1
-
CEsat
© NXP B.V. 2010. All rights reserved.
(BISS) transistor
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