PBSS4032SPN,115 NXP Semiconductors, PBSS4032SPN,115 Datasheet

TRANS ARRAY NPN/PNP 30V SO8

PBSS4032SPN,115

Manufacturer Part Number
PBSS4032SPN,115
Description
TRANS ARRAY NPN/PNP 30V SO8
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PBSS4032SPN,115

Transistor Type
NPN, PNP
Current - Collector (ic) (max)
5.7A, 4.8A
Voltage - Collector Emitter Breakdown (max)
30V
Vce Saturation (max) @ Ib, Ic
450mV @ 300mA, 6A / 510mV @ 250mA, 5A
Current - Collector Cutoff (max)
100nA
Dc Current Gain (hfe) (min) @ Ic, Vce
250 @ 2A, 2V / 150 @ 2A, 2V
Power - Max
2.3W
Frequency - Transition
140MHz, 115MHz
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
568-6400-2
PBSS4032SPN,115
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
NPN/PNP low V
medium power Surface-Mounted Device (SMD) plastic package.
Table 1.
Table 2.
Type number
PBSS4032SPN
Symbol Parameter
TR1; NPN low V
V
I
I
R
C
CM
CEO
CEsat
PBSS4032SPN
30 V NPN/PNP low V
Rev. 2 — 14 October 2010
Low collector-emitter saturation voltage V
Optimized switching time
High collector current capability I
High collector current gain (h
High efficiency due to less heat generation
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
DC-to-DC conversion
Battery-driven devices
Power management
Charging circuits
collector-emitter voltage
collector current
peak collector current
collector-emitter
saturation resistance
Product overview
Quick reference data
CEsat
CEsat
Package
NXP
SOT96-1
transistor
Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8)
CEsat
FE
open base
single pulse; t
) at high I
Conditions
I
C
C
Name
SO8
= 4 A; I
and I
(BISS) transistor
CM
B
C
= 0.4 A
CEsat
p
≤ 1 ms
NPN/NPN
complement
PBSS4032SN
[1]
Min
-
-
-
-
Product data sheet
Typ
-
-
-
45
PNP/PNP
complement
PBSS4032SP
Max
30
5.7
10
62.5
Unit
V
A
A

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PBSS4032SPN,115 Summary of contents

Page 1

PBSS4032SPN 30 V NPN/PNP low V Rev. 2 — 14 October 2010 1. Product profile 1.1 General description NPN/PNP low V medium power Surface-Mounted Device (SMD) plastic package. Table 1. Type number PBSS4032SPN 1.2 Features and benefits Low collector-emitter saturation ...

Page 2

... NXP Semiconductors Table 2. Symbol Parameter TR2; PNP low V V CEO CEsat [1] Pulse test Pinning information Table 3. Pin Ordering information Table 4. Type number PBSS4032SPN SO8 4. Marking Table 5. Type number PBSS4032SPN PBSS4032SPN Product data sheet Quick reference data …continued Conditions transistor CEsat collector-emitter voltage ...

Page 3

... NXP Semiconductors 5. Limiting values Table 6. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol TR1 (NPN TR2 (PNP Per transistor; for the PNP transistor with negative polarity V CBO V CEO V EBO tot Per device P tot amb T stg [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. ...

Page 4

... NXP Semiconductors (1) Ceramic PCB, Al (2) FR4 PCB, mounting pad for collector 1 cm (3) FR4 PCB, standard footprint Fig 1. 6. Thermal characteristics Table 7. Symbol Per transistor R th(j-a) R th(j-sp) Per device R th(j-a) [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm ...

Page 5

... NXP Semiconductors th(j-a) (K/W) duty cycle = 1 0. 0.5 0.33 0.2 0.1 10 0.05 0.02 0. −1 10 −5 − FR4 PCB, standard footprint Fig 2. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values th(j-a) (K/W) duty cycle = 0.75 0.5 ...

Page 6

... NXP Semiconductors 2 10 duty cycle = 1 0.75 Z th(j-a) 0.5 (K/W) 0.33 0.2 10 0.1 0.05 0.02 0. −1 10 −5 − Ceramic PCB standard footprint 2 3 Fig 4. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBSS4032SPN Product data sheet − ...

Page 7

... NXP Semiconductors 7. Characteristics Table amb Symbol Parameter TR1; NPN low V I CBO I CES I EBO CEsat R CEsat V BEsat V BEon off PBSS4032SPN Product data sheet Characteristics ° C unless otherwise specified. Conditions transistor CEsat collector-base cut-off current 150 ° collector-emitter cut-off current emitter-base cut-off current ...

Page 8

... NXP Semiconductors Table amb Symbol Parameter TR2; PNP low V I CBO I CES I EBO CEsat R CEsat V BEsat V BEon off [1] Pulse test: t PBSS4032SPN Product data sheet Characteristics …continued ° C unless otherwise specified. Conditions transistor CEsat = − collector-base V CB cut-off current = − 150 °C ...

Page 9

... NXP Semiconductors 1000 h FE (1) 800 (2) 600 400 (3) 200 0 − 100 °C (1) T amb = 25 °C (2) T amb = −55 °C (3) T amb Fig 5. TR1 (NPN): DC current gain as a function of collector current; typical values 1 (V) (1) 0.8 (2) (3) 0.4 0.0 − −55 °C (1) T amb = 25 ° ...

Page 10

... NXP Semiconductors 1 V CEsat (V) −1 10 (1) (2) (3) −2 10 − 100 °C (1) T amb = 25 °C (2) T amb = −55 °C (3) T amb Fig 9. TR1 (NPN): Collector-emitter saturation voltage as a function of collector current; typical values CEsat (Ω −1 10 −2 10 − 100 °C (1) T amb = 25 ° ...

Page 11

... NXP Semiconductors 800 h FE (1) 600 (2) 400 (3) 200 0 −1 −10 −1 −10 = − 100 °C (1) T amb = 25 °C (2) T amb = −55 °C (3) T amb Fig 13. TR2 (PNP): DC current gain as a function of collector current; typical values −1 (V) −1.0 (1) (2) −0.6 (3) −0.2 −1 −10 − ...

Page 12

... NXP Semiconductors −1 V CEsat (V) −1 −10 (1) (2) (3) −2 −10 −1 −10 −1 − 100 °C (1) T amb = 25 °C (2) T amb = −55 °C (3) T amb Fig 17. TR2 (PNP): Collector-emitter saturation voltage as a function of collector current; typical values CEsat (Ω −1 10 −2 10 −1 − ...

Page 13

... NXP Semiconductors 8. Test information Fig 21. TR1 (NPN): BISS transistor switching time definition Fig 22. TR1 (NPN): Test circuit for switching times PBSS4032SPN Product data sheet (probe) oscilloscope 450 Ω 12 0. Bon All information provided in this document is subject to legal disclaimers. Rev. 2 — 14 October 2010 ...

Page 14

... NXP Semiconductors − − Fig 23. TR2 (PNP): BISS transistor switching time definition Fig 24. TR2 (PNP): Test circuit for switching times PBSS4032SPN Product data sheet (probe) oscilloscope 450 Ω −12 − −0. Bon All information provided in this document is subject to legal disclaimers. Rev. 2 — 14 October 2010 ...

Page 15

... NXP Semiconductors 9. Package outline Fig 25. Package outline SOT96-1 (SO8) 10. Packing information Table 9. The indicated -xxx are the last three digits of the 12NC ordering code. Type number PBSS4032SPN [1] For further information and the availability of packing methods, see PBSS4032SPN Product data sheet 5.0 4 ...

Page 16

... NXP Semiconductors 11. Soldering Fig 26. Reflow soldering footprint SOT96-1 (SO8) Fig 27. Wave soldering footprint SOT96-1 (SO8) PBSS4032SPN Product data sheet 5.50 0.60 (8×) solder lands placement accuracy ± 0.25 occupied area 1.20 (2×) 0.60 (6×) 0.3 (2×) 1.27 (6×) 5.50 board direction ...

Page 17

... NXP Semiconductors 12. Revision history Table 10. Revision history Document ID Release date PBSS4032SPN v.2 20101014 • Modifications: Figure 1 “Per device: Power derating PBSS4032SPN v.1 20100714 PBSS4032SPN Product data sheet 30 V NPN/PNP low V Data sheet status Product data sheet curves”: updated. Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — ...

Page 18

... In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or ...

Page 19

... NXP Semiconductors Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 14. Contact information For more information, please visit: For sales office addresses, please send an email to: ...

Page 20

... NXP Semiconductors 15. Contents 1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description . . . . . . . . . . . . . . . . . . . . . 1 1.2 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Limiting values Thermal characteristics . . . . . . . . . . . . . . . . . . 4 7 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 7 8 Test information . . . . . . . . . . . . . . . . . . . . . . . . 13 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 15 10 Packing information . . . . . . . . . . . . . . . . . . . . 15 11 Soldering ...

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