PBSS4032SPN,115 NXP Semiconductors, PBSS4032SPN,115 Datasheet
PBSS4032SPN,115
Specifications of PBSS4032SPN,115
PBSS4032SPN,115
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PBSS4032SPN,115 Summary of contents
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PBSS4032SPN 30 V NPN/PNP low V Rev. 2 — 14 October 2010 1. Product profile 1.1 General description NPN/PNP low V medium power Surface-Mounted Device (SMD) plastic package. Table 1. Type number PBSS4032SPN 1.2 Features and benefits Low collector-emitter saturation ...
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... NXP Semiconductors Table 2. Symbol Parameter TR2; PNP low V V CEO CEsat [1] Pulse test Pinning information Table 3. Pin Ordering information Table 4. Type number PBSS4032SPN SO8 4. Marking Table 5. Type number PBSS4032SPN PBSS4032SPN Product data sheet Quick reference data …continued Conditions transistor CEsat collector-emitter voltage ...
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... NXP Semiconductors 5. Limiting values Table 6. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol TR1 (NPN TR2 (PNP Per transistor; for the PNP transistor with negative polarity V CBO V CEO V EBO tot Per device P tot amb T stg [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. ...
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... NXP Semiconductors (1) Ceramic PCB, Al (2) FR4 PCB, mounting pad for collector 1 cm (3) FR4 PCB, standard footprint Fig 1. 6. Thermal characteristics Table 7. Symbol Per transistor R th(j-a) R th(j-sp) Per device R th(j-a) [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm ...
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... NXP Semiconductors th(j-a) (K/W) duty cycle = 1 0. 0.5 0.33 0.2 0.1 10 0.05 0.02 0. −1 10 −5 − FR4 PCB, standard footprint Fig 2. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values th(j-a) (K/W) duty cycle = 0.75 0.5 ...
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... NXP Semiconductors 2 10 duty cycle = 1 0.75 Z th(j-a) 0.5 (K/W) 0.33 0.2 10 0.1 0.05 0.02 0. −1 10 −5 − Ceramic PCB standard footprint 2 3 Fig 4. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBSS4032SPN Product data sheet − ...
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... NXP Semiconductors 7. Characteristics Table amb Symbol Parameter TR1; NPN low V I CBO I CES I EBO CEsat R CEsat V BEsat V BEon off PBSS4032SPN Product data sheet Characteristics ° C unless otherwise specified. Conditions transistor CEsat collector-base cut-off current 150 ° collector-emitter cut-off current emitter-base cut-off current ...
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... NXP Semiconductors Table amb Symbol Parameter TR2; PNP low V I CBO I CES I EBO CEsat R CEsat V BEsat V BEon off [1] Pulse test: t PBSS4032SPN Product data sheet Characteristics …continued ° C unless otherwise specified. Conditions transistor CEsat = − collector-base V CB cut-off current = − 150 °C ...
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... NXP Semiconductors 1000 h FE (1) 800 (2) 600 400 (3) 200 0 − 100 °C (1) T amb = 25 °C (2) T amb = −55 °C (3) T amb Fig 5. TR1 (NPN): DC current gain as a function of collector current; typical values 1 (V) (1) 0.8 (2) (3) 0.4 0.0 − −55 °C (1) T amb = 25 ° ...
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... NXP Semiconductors 1 V CEsat (V) −1 10 (1) (2) (3) −2 10 − 100 °C (1) T amb = 25 °C (2) T amb = −55 °C (3) T amb Fig 9. TR1 (NPN): Collector-emitter saturation voltage as a function of collector current; typical values CEsat (Ω −1 10 −2 10 − 100 °C (1) T amb = 25 ° ...
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... NXP Semiconductors 800 h FE (1) 600 (2) 400 (3) 200 0 −1 −10 −1 −10 = − 100 °C (1) T amb = 25 °C (2) T amb = −55 °C (3) T amb Fig 13. TR2 (PNP): DC current gain as a function of collector current; typical values −1 (V) −1.0 (1) (2) −0.6 (3) −0.2 −1 −10 − ...
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... NXP Semiconductors −1 V CEsat (V) −1 −10 (1) (2) (3) −2 −10 −1 −10 −1 − 100 °C (1) T amb = 25 °C (2) T amb = −55 °C (3) T amb Fig 17. TR2 (PNP): Collector-emitter saturation voltage as a function of collector current; typical values CEsat (Ω −1 10 −2 10 −1 − ...
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... NXP Semiconductors 8. Test information Fig 21. TR1 (NPN): BISS transistor switching time definition Fig 22. TR1 (NPN): Test circuit for switching times PBSS4032SPN Product data sheet (probe) oscilloscope 450 Ω 12 0. Bon All information provided in this document is subject to legal disclaimers. Rev. 2 — 14 October 2010 ...
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... NXP Semiconductors − − Fig 23. TR2 (PNP): BISS transistor switching time definition Fig 24. TR2 (PNP): Test circuit for switching times PBSS4032SPN Product data sheet (probe) oscilloscope 450 Ω −12 − −0. Bon All information provided in this document is subject to legal disclaimers. Rev. 2 — 14 October 2010 ...
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... NXP Semiconductors 9. Package outline Fig 25. Package outline SOT96-1 (SO8) 10. Packing information Table 9. The indicated -xxx are the last three digits of the 12NC ordering code. Type number PBSS4032SPN [1] For further information and the availability of packing methods, see PBSS4032SPN Product data sheet 5.0 4 ...
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... NXP Semiconductors 11. Soldering Fig 26. Reflow soldering footprint SOT96-1 (SO8) Fig 27. Wave soldering footprint SOT96-1 (SO8) PBSS4032SPN Product data sheet 5.50 0.60 (8×) solder lands placement accuracy ± 0.25 occupied area 1.20 (2×) 0.60 (6×) 0.3 (2×) 1.27 (6×) 5.50 board direction ...
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... NXP Semiconductors 12. Revision history Table 10. Revision history Document ID Release date PBSS4032SPN v.2 20101014 • Modifications: Figure 1 “Per device: Power derating PBSS4032SPN v.1 20100714 PBSS4032SPN Product data sheet 30 V NPN/PNP low V Data sheet status Product data sheet curves”: updated. Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — ...
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... In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or ...
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... NXP Semiconductors Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 14. Contact information For more information, please visit: For sales office addresses, please send an email to: ...
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... NXP Semiconductors 15. Contents 1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description . . . . . . . . . . . . . . . . . . . . . 1 1.2 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Limiting values Thermal characteristics . . . . . . . . . . . . . . . . . . 4 7 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 7 8 Test information . . . . . . . . . . . . . . . . . . . . . . . . 13 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 15 10 Packing information . . . . . . . . . . . . . . . . . . . . 15 11 Soldering ...