PBSS4041SN,115 NXP Semiconductors, PBSS4041SN,115 Datasheet - Page 9

• Manufacturer Part Number: PBSS4041SN,115
• Description: TRANS ARRAY NPN/NPN 60V 6.7A SO8
• Manufacturer: NXP Semiconductors

Specifications of PBSS4041SN,115

• Transistor Type: 2 NPN (Dual)
• Current - Collector (ic) (max): 6.7A
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 350mV @ 350mA, 7A
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 150 @ 4A, 2V
• Power - Max: 2.3W
• Frequency - Transition: 130MHz
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-6406-2; PBSS4041SN,115

NXP Semiconductors
8. Test information
PBSS4041SN
Product data sheet
Fig 13. BISS transistor switching time definition
Fig 14. Test circuit for switching times
90 %
10 %
90 %
10 %
I
I
C
B
V
CC
= 12.5 V; I
All information provided in this document is subject to legal disclaimers.
oscilloscope
t
d
t
on
C
Rev. 2 — 18 October 2010
= 1 A; I
V
t
I
r
(probe)
450 Ω
Bon
= 0.05 A; I
R1
R2
60 V, 6.7 A NPN/NPN low V
R
Boff
B
V
BB
= −0.05 A
R
C
V
CC
DUT
V
o
mlb826
I
Bon
(probe)
450 Ω
I
t
Boff
(100 %)
s
PBSS4041SN
t
off
oscilloscope
CEsat
input pulse
(idealized waveform)
output pulse
(idealized waveform)
© NXP B.V. 2010. All rights reserved.
(BISS) transistor
t
f
I
006aaa003
C
(100 %)
t
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