PBSS4041SN,115 NXP Semiconductors, PBSS4041SN,115 Datasheet

TRANS ARRAY NPN/NPN 60V 6.7A SO8

PBSS4041SN,115

Manufacturer Part Number
PBSS4041SN,115
Description
TRANS ARRAY NPN/NPN 60V 6.7A SO8
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PBSS4041SN,115

Transistor Type
2 NPN (Dual)
Current - Collector (ic) (max)
6.7A
Voltage - Collector Emitter Breakdown (max)
60V
Vce Saturation (max) @ Ib, Ic
350mV @ 350mA, 7A
Current - Collector Cutoff (max)
100nA
Dc Current Gain (hfe) (min) @ Ic, Vce
150 @ 4A, 2V
Power - Max
2.3W
Frequency - Transition
130MHz
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
568-6406-2
PBSS4041SN,115
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
NPN/NPN low V
medium power Surface-Mounted Device (SMD) plastic package.
Table 1.
Table 2.
[1]
Type number
PBSS4041SN
Symbol Parameter
V
I
I
R
C
CM
CEO
CEsat
PBSS4041SN
60 V, 6.7 A NPN/NPN low V
Rev. 2 — 18 October 2010
Very low collector-emitter saturation voltage V
High collector current capability I
High collector current gain (h
High efficiency due to less heat generation
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
Loadswitch
Battery-driven devices
Power management
Charging circuits
Power switches (e.g. motors, fans)
Pulse test: t
collector-emitter voltage
collector current
peak collector current
collector-emitter
saturation resistance
Product overview
Quick reference data
p
≤ 300 μs; δ ≤ 0.02.
CEsat
Package
NXP
SOT96-1
Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8)
FE
open base
single pulse;
) at high I
Conditions
t
I
p
C
C
Name
SO8
≤ 1 ms
= 4 A; I
and I
CEsat
CM
B
C
= 0.2 A
(BISS) transistor
CEsat
PNP/PNP
complement
PBSS4041SP
[1]
Min
-
-
-
-
Typ
-
-
32
-
Product data sheet
NPN/PNP
complement
PBSS4041SPN
Max
60
6.7
15
48
V
Unit
A
A

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PBSS4041SN,115 Summary of contents

Page 1

PBSS4041SN 60 V, 6.7 A NPN/NPN low V Rev. 2 — 18 October 2010 1. Product profile 1.1 General description NPN/NPN low V medium power Surface-Mounted Device (SMD) plastic package. Table 1. Type number PBSS4041SN 1.2 Features and benefits Very ...

Page 2

... NXP Semiconductors 2. Pinning information Table 3. Pin Ordering information Table 4. Type number PBSS4041SN 4. Marking Table 5. Type number PBSS4041SN 5. Limiting values Table 6. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Per transistor V CBO V CEO V EBO tot PBSS4041SN Product data sheet ...

Page 3

... NXP Semiconductors Table 6. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Per device P tot amb T stg [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm ...

Page 4

... NXP Semiconductors 6. Thermal characteristics Table 7. Symbol Per transistor R th(j-a) R th(j-sp) Per device R th(j-a) [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm [3] Device mounted on a ceramic PCB, Al ...

Page 5

... NXP Semiconductors th(j-a) (K/W) duty cycle = 0.75 0.5 0.33 0.2 0.1 10 0.05 0.02 0. −1 10 −5 − FR4 PCB, mounting pad for collector 1 cm Fig 3. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 2 10 duty cycle = 1 ...

Page 6

... NXP Semiconductors 7. Characteristics Table amb Symbol Parameter Per transistor I CBO I CES I EBO CEsat R CEsat V BEsat V BEon off [1] Pulse test: t PBSS4041SN Product data sheet 60 V, 6.7 A NPN/NPN low V Characteristics ° C unless otherwise specified. Conditions collector-base cut-off current 150 ° collector-emitter cut-off current ...

Page 7

... NXP Semiconductors 1000 ( 800 (2) 600 (3) 400 200 0 − 100 °C (1) T amb = 25 °C (2) T amb = −55 °C (3) T amb Fig 5. DC current gain as a function of collector current; typical values 1 (V) 1.0 (1) (2) 0.6 (3) 0.2 − −55 °C (1) T amb = 25 °C (2) T amb = 100 ° ...

Page 8

... NXP Semiconductors 1 V CEsat (V) −1 10 (1) (2) −2 10 (3) −3 10 − 100 °C (1) T amb = 25 °C (2) T amb = −55 °C (3) T amb Fig 9. Collector-emitter saturation voltage as a function of collector current; typical values CEsat (Ω −1 10 −2 10 − 100 °C (1) T amb = 25 °C ...

Page 9

... NXP Semiconductors 8. Test information Fig 13. BISS transistor switching time definition Fig 14. Test circuit for switching times PBSS4041SN Product data sheet 60 V, 6.7 A NPN/NPN low (probe) oscilloscope 450 Ω 12 0. Bon All information provided in this document is subject to legal disclaimers. Rev. 2 — 18 October 2010 ...

Page 10

... NXP Semiconductors 9. Package outline Fig 15. Package outline SOT96-1 (SO8) 10. Packing information Table 9. The indicated -xxx are the last three digits of the 12NC ordering code. Type number PBSS4041SN [1] For further information and the availability of packing methods, see PBSS4041SN Product data sheet 60 V, 6.7 A NPN/NPN low V 5 ...

Page 11

... NXP Semiconductors 11. Soldering Fig 16. Reflow soldering footprint SOT96-1 (SO8) Fig 17. Wave soldering footprint SOT96-1 (SO8) PBSS4041SN Product data sheet 60 V, 6.7 A NPN/NPN low V 5.50 0.60 (8×) solder lands placement accuracy ± 0.25 occupied area 1.20 (2×) 0.60 (6×) 0.3 (2×) 1.27 (6×) 5 ...

Page 12

... NXP Semiconductors 12. Revision history Table 10. Revision history Document ID Release date PBSS4041SN v.2 20101018 • Modifications: Figure 1 “Per device: Power derating PBSS4041SN v.1 20100714 PBSS4041SN Product data sheet 60 V, 6.7 A NPN/NPN low V Data sheet status Product data sheet curves”: updated. Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — ...

Page 13

... In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or ...

Page 14

... NXP Semiconductors Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 14. Contact information For more information, please visit: For sales office addresses, please send an email to: ...

Page 15

... NXP Semiconductors 15. Contents 1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description . . . . . . . . . . . . . . . . . . . . . 1 1.2 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Limiting values Thermal characteristics . . . . . . . . . . . . . . . . . . 4 7 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 8 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 9 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 10 Packing information . . . . . . . . . . . . . . . . . . . . 10 11 Soldering ...

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