PBSS4041SN,115 NXP Semiconductors, PBSS4041SN,115 Datasheet - Page 6

• Manufacturer Part Number: PBSS4041SN,115
• Description: TRANS ARRAY NPN/NPN 60V 6.7A SO8
• Manufacturer: NXP Semiconductors

Specifications of PBSS4041SN,115

• Transistor Type: 2 NPN (Dual)
• Current - Collector (ic) (max): 6.7A
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 350mV @ 350mA, 7A
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 150 @ 4A, 2V
• Power - Max: 2.3W
• Frequency - Transition: 130MHz
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-6406-2; PBSS4041SN,115

NXP Semiconductors
7. Characteristics
PBSS4041SN
Product data sheet
Table 8.
T
[1]
Symbol Parameter
Per transistor
I
I
I
h
V
R
V
V
t
t
t
t
t
t
f
C
CBO
CES
EBO
d
r
on
s
f
off
T
amb
FE
CEsat
BEsat
BEon
CEsat
c
Pulse test: t
= 25
°
collector-base
cut-off current
collector-emitter
cut-off current
emitter-base
cut-off current
DC current gain
collector-emitter
saturation voltage
collector-emitter
saturation resistance
base-emitter
saturation voltage
base-emitter
turn-on voltage
delay time
rise time
turn-on time
storage time
fall time
turn-off time
transition frequency
collector capacitance V
C unless otherwise specified.
Characteristics
p
≤ 300 μs; δ ≤ 0.02.
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 18 October 2010
V
Conditions
V
V
T
V
V
V
I
I
I
I
I
I
I
I
I
V
V
I
f = 100 MHz
f = 1 MHz
C
C
C
C
C
C
C
C
C
Bon
j
CB
CB
CE
EB
CE
CE
CC
CE
CB
I
I
I
I
I
= 150 °C
= 1 A; I
= 1 A; I
= 2 A; I
= 4 A; I
= 4 A; I
= 7 A; I
= 4 A; I
= 1 A; I
= 4 A; I
C
C
C
C
C
= 0.05 A; I
= 60 V; I
= 60 V; I
= 48 V; V
= 5 V; I
= 2 V
= 2 V; I
= 10 V; I
= 10 V; I
= 12.5 V; I
= 500 mA
= 1 A
= 2 A
= 4 A
= 6 A
60 V, 6.7 A NPN/NPN low V
B
B
B
B
B
B
B
B
B
= 50 mA
= 10 mA
= 40 mA
= 200 mA
= 40 mA
= 350 mA
= 200 mA
= 100 mA
= 400 mA
C
C
E
E
C
E
= 0 A
= 2 A
BE
= 0 A
= 0 A;
Boff
= i
= 100 mA;
C
= 0 V
= 1 A;
e
= −0.05 A
= 0 A;
[1]
[1]
[1]
[1]
[1]
Min
-
-
-
-
300
300
250
150
75
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
PBSS4041SN
CEsat
500
100
1050
220
1270
Typ
-
-
-
-
500
450
250
150
40
65
85
125
220
230
32
0.86
1.05
0.75
35
65
130
35
© NXP B.V. 2010. All rights reserved.
(BISS) transistor
Max
100
50
100
100
-
-
-
-
-
60
100
145
190
320
350
48
1
1.2
0.85
-
-
-
-
-
-
-
-
6 of 15
ns
Unit
nA
μA
nA
nA
mV
mV
mV
mV
mV
mV
mΩ
V
V
V
ns
ns
ns
ns
ns
MHz
pF