PBSS4041SN,115 NXP Semiconductors, PBSS4041SN,115 Datasheet - Page 3

• Manufacturer Part Number: PBSS4041SN,115
• Description: TRANS ARRAY NPN/NPN 60V 6.7A SO8
• Manufacturer: NXP Semiconductors

Specifications of PBSS4041SN,115

• Transistor Type: 2 NPN (Dual)
• Current - Collector (ic) (max): 6.7A
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 350mV @ 350mA, 7A
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 150 @ 4A, 2V
• Power - Max: 2.3W
• Frequency - Transition: 130MHz
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-6406-2; PBSS4041SN,115

NXP Semiconductors
PBSS4041SN
Product data sheet
Table 6.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
[3]
Symbol
Per device
P
T
T
T
Fig 1.
j
amb
stg
tot
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
Device mounted on a ceramic PCB, Al
(1) Ceramic PCB, Al
(2) FR4 PCB, mounting pad for collector 1 cm
(3) FR4 PCB, standard footprint
Per device: Power derating curves
Limiting values
Parameter
total power dissipation
junction temperature
ambient temperature
storage temperature
All information provided in this document is subject to legal disclaimers.
P
(W)
Rev. 2 — 18 October 2010
tot
2
3.0
2.0
1.0
0.0
O
−75
3
, standard footprint
…continued
−25
(1)
(2)
(3)
2
O
Conditions
T
3
60 V, 6.7 A NPN/NPN low V
, standard footprint.
amb
25
≤ 25 °C
2
75
125
T
006aac322
amb
[1]
[2]
[3]
(°C)
PBSS4041SN
175
Min
-
-
-
-
−55
−65
CEsat
© NXP B.V. 2010. All rights reserved.
(BISS) transistor
Max
0.86
1.4
2.3
150
+150
+150
Unit
W
W
W
°C
°C
°C
2
.
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