BFG410W,135 NXP Semiconductors, BFG410W,135 Datasheet - Page 8

• Manufacturer Part Number: BFG410W,135
• Description: TRANS RF NPN 22GHZ 4.5V SOT343
• Manufacturer: NXP Semiconductors

Specifications of BFG410W,135

• Package / Case: SC-82A, SOT-343
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 4.5V
• Frequency - Transition: 22GHz
• Noise Figure (db Typ @ F): 0.9dB ~ 1.2dB @ 900MHz ~ 2GHz
• Gain: 21dB
• Power - Max: 54mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 10mA, 2V
• Current - Collector (ic) (max): 12mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 50
• Dc Current Gain Hfe Max: 120
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 4.5 V
• Emitter- Base Voltage Vebo: 1 V
• Continuous Collector Current: 10 mA
• Power Dissipation: 54 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
Noise data
V
1998 Mar 11
handbook, full pagewidth
900
2000
CE
(MHz)
NPN 22 GHz wideband transistor
I
C
f
= 2 V; typical values.
= 10 mA; V
1
2
4
6
8
10
12
14
1
2
4
6
8
10
12
14
(mA)
I
CE
C
= 2 V; Z
0.8
0.9
1.1
1.3
1.5
1.7
1.9
2.1
1.2
1.2
1.4
1.6
1.8
2.0
2.2
2.4
F
(dB)
o
= 50 
Fig.12 Common emitter output reflection coefficient (S
min
180°
0.73
0.58
0.40
0.28
0.20
0.14
0.06
0.05
0.64
0.50
0.34
0.25
0.17
0.12
0.05
0.03

mag
0
−135°
135°
0.2
0.2
11.2
10.1
10.1
11.0
10.5
10.1
14.2
35.7
35.8
34.4
33.7
34.5
35.8
38.0
44.8

8.0
0.2
angle
0.5
0.5
0.56
0.43
0.33
0.30
0.30
0.27
0.25
0.26
0.57
0.44
0.37
0.34
0.35
0.34
0.35
0.34
0.5
()
r
n
−90°
90°
8
1
1
1
handbook, halfpage
(1) f = 2 GHz; V
(2) f = 900 MHz; V
Fig.13 Minimum noise figure as a function of the
F min
(dB)
2
3
2
1
0
3 GHz
0
collector current; typical values.
2
2
5
CE
22
−45°
45°
CE
40 MHz
= 2 V.
); typical values.
4
5
5
= 2 V.
MGG727
0°
(1)
(2)
8
1.0
0.8
0.6
0.4
0.2
0
1.0
Product specification
12
BFG410W
I C (mA)
MGG723
16