BFG410W,135 NXP Semiconductors, BFG410W,135 Datasheet - Page 3

• Manufacturer Part Number: BFG410W,135
• Description: TRANS RF NPN 22GHZ 4.5V SOT343
• Manufacturer: NXP Semiconductors

Specifications of BFG410W,135

• Package / Case: SC-82A, SOT-343
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 4.5V
• Frequency - Transition: 22GHz
• Noise Figure (db Typ @ F): 0.9dB ~ 1.2dB @ 900MHz ~ 2GHz
• Gain: 21dB
• Power - Max: 54mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 10mA, 2V
• Current - Collector (ic) (max): 12mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 50
• Dc Current Gain Hfe Max: 120
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 4.5 V
• Emitter- Base Voltage Vebo: 1 V
• Continuous Collector Current: 10 mA
• Power Dissipation: 54 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. T
THERMAL CHARACTERISTICS
1998 Mar 11
handbook, halfpage
V
V
V
I
P
T
T
R
SYMBOL
SYMBOL
C
stg
j
CBO
CEO
EBO
tot
NPN 22 GHz wideband transistor
th j-s
s
(mW)
P tot
is the temperature at the soldering point of the emitter pins.
60
40
20
0
0
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
operating junction temperature
thermal resistance from junction to soldering point
Fig.2 Power derating curve.
40
PARAMETER
80
120
PARAMETER
T s (°C)
MGD960
open emitter
open base
open collector
T
160
s
 110 C; note 1; see Fig.2
CONDITIONS
3





65

MIN.
VALUE
750
10
4.5
1
12
54
+150
150
Product specification
MAX.
BFG410W
UNIT
K/W
V
V
V
mA
mW
C
C
UNIT