BFR92A,235 NXP Semiconductors, BFR92A,235 Datasheet - Page 7

• Manufacturer Part Number: BFR92A,235
• Description: TRANS NPN 15V 25MA 5GHZ SOT23
• Manufacturer: NXP Semiconductors

Specifications of BFR92A,235

• Package / Case: TO-236-3, SC-59, SOT-23-3
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 5GHz
• Noise Figure (db Typ @ F): 2.1dB ~ 3dB @ 1GHz ~ 2GHz
• Power - Max: 300mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 65 @ 15mA, 10V
• Current - Collector (ic) (max): 25mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 65
• Dc Current Gain Hfe Max: 135
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 25 mA
• Power Dissipation: 300 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

NXP Semiconductors
handbook, halfpage
handbook, halfpage
NPN 5 GHz wideband transistor
d im
(dB)
V
V
f
Measured in MATV test circuit (see Fig.2).
Fig.13 Minimum noise figure as a function of
(dB)
p
CE
CE
+ f
F
45
50
55
60
65
70
= 10 V.
= 10 V; V
q
4
3
2
0
10
1
1
f
Fig.15 Intermodulation distortion;
r
= 793.25 MHz; T
collector current; typical values.
O
= 150 mV (43.5 dBmV);
typical values.
amb
= 25 C.
20
10
f = 2 GHz
1 GHz
500 MHz
I
I
C
C
(mA)
(mA)
MBB282
MCD081
30
10
Rev. 04 - 2 March 2009
2
handbook, halfpage
handbook, halfpage
(dB)
V
d 2
V
Measured in MATV test circuit (see Fig.2).
Fig.14 Minimum noise figure as a function of
Fig.16 Second order intermodulation distortion;
(dB)
CE
CE
F
35
40
45
50
55
60
= 10 V.
= 10 V; V
4
3
2
0
1
10
10
2
frequency; typical values.
typical values.
O
= 60 mV; f
p
+ f
q
20
10
f
r
3
= 810 MHz; T
10 mA
I
5 mA
I
Product specification
C
C
f (MHz)
(mA)
= 15 mA
amb
BFR92A
MBB283
MCD082
= 25 C.
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30
10
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