BFR92A,235 NXP Semiconductors, BFR92A,235 Datasheet - Page 6

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BFR92A,235

Manufacturer Part Number
BFR92A,235
Description
TRANS NPN 15V 25MA 5GHZ SOT23
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BFR92A,235

Package / Case
TO-236-3, SC-59, SOT-23-3
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
15V
Frequency - Transition
5GHz
Noise Figure (db Typ @ F)
2.1dB ~ 3dB @ 1GHz ~ 2GHz
Power - Max
300mW
Dc Current Gain (hfe) (min) @ Ic, Vce
65 @ 15mA, 10V
Current - Collector (ic) (max)
25mA
Mounting Type
Surface Mount
Dc Collector/base Gain Hfe Min
65
Dc Current Gain Hfe Max
135
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Collector- Emitter Voltage Vceo Max
15 V
Emitter- Base Voltage Vebo
2 V
Continuous Collector Current
25 mA
Power Dissipation
300 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
NXP Semiconductors
handbook, halfpage
handbook, halfpage
NPN 5 GHz wideband transistor
I
I
G
G
C
C
gain
(dB)
UM
max
= 4 mA; V
(mS)
= 5 mA; V
B S
= maximum unilateral power gain; MSG = maximum stable gain;
50
= maximum available gain.
40
20
20
40
40
30
20
10
Fig.9
0
0
Fig.11 Circles of constant noise figure;
10
0
CE
CE
= 10 V; f = 800 MHz.
= 10 V.
Gain as a function of frequency;
typical values.
typical values.
1.7
MSG
20
1.8
10
2
2.0
G UM
40
2.5
10
F = 3.0 dB
3
60
f (MHz)
G
G max
S
MBB277
MBB280
(mS)
10
80
4
Rev. 04 - 2 March 2009
handbook, halfpage
handbook, halfpage
(mS)
I
G
G
B S
C
I
C
UM
max
gain
(dB)
= 15 mA; V
= 14 mA; V
= maximum unilateral power gain; MSG = maximum stable gain;
50
= maximum available gain.
30
20
10
10
20
30
40
30
20
10
Fig.10 Gain as a function of frequency;
Fig.12 Circles of constant noise figure;
0
0
10
0
CE
CE
= 10 V.
typical values.
typical values.
= 10 V; f = 800 MHz.
MSG
2.4
10
G UM
20
2
2.5
3.0
10
40
3
Product specification
G max
G
f (MHz)
F = 3.5 dB
S
(mS)
BFR92A
MBB276
MBB281
10
6 of 12
60
4

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