BFR92A,235 NXP Semiconductors, BFR92A,235 Datasheet - Page 5
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BFR92A,235
Manufacturer Part Number
BFR92A,235
Description
TRANS NPN 15V 25MA 5GHZ SOT23
Manufacturer
NXP Semiconductors
Datasheet
1.BFR92A215.pdf
(12 pages)
Specifications of BFR92A,235
Package / Case
TO-236-3, SC-59, SOT-23-3
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
15V
Frequency - Transition
5GHz
Noise Figure (db Typ @ F)
2.1dB ~ 3dB @ 1GHz ~ 2GHz
Power - Max
300mW
Dc Current Gain (hfe) (min) @ Ic, Vce
65 @ 15mA, 10V
Current - Collector (ic) (max)
25mA
Mounting Type
Surface Mount
Dc Collector/base Gain Hfe Min
65
Dc Current Gain Hfe Max
135
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Collector- Emitter Voltage Vceo Max
15 V
Emitter- Base Voltage Vebo
2 V
Continuous Collector Current
25 mA
Power Dissipation
300 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
NXP Semiconductors
handbook, halfpage
handbook, halfpage
NPN 5 GHz wideband transistor
I
Fig.5
V
MSG = maximum stable gain;
G
Fig.7
C
CE
UM
(pF)
= i
gain
(dB)
C c
0.8
0.6
0.4
0.2
= 10 V; f = 500 MHz.
30
20
10
c
= maximum unilateral power gain.
0
1
0
= 0; f = 1 MHz; T
0
0
Collector capacitance as a function of
collector-base voltage; typical values.
Gain as a function of collector current;
typical values.
5
5
j
= 25 C.
10
10
15
15
G UM
MSG
20
V CB (V)
I C (mA)
MBB274
MBB278
20
25
Rev. 04 - 2 March 2009
handbook, halfpage
handbook, halfpage
V
Fig.6
V
MSG = maximum stable gain;
G
Fig.8
(GHz)
CE
CE
UM
f T
gain
(dB)
= 10 V; f = 500 MHz; T
= 10 V; f = 1 GHz.
30
20
10
= maximum unilateral power gain.
0
6
4
2
0
0
0
Transition frequency as a function of
collector current; typical values.
Gain as a function of collector current;
typical values.
5
10
amb
10
= 25 C.
15
20
G UM
MSG
Product specification
I
C
20
I
(mA)
C
BFR92A
MBB275
MBB279
(mA)
5 of 12
30
25