BFG480W,135 NXP Semiconductors, BFG480W,135 Datasheet - Page 6

• Manufacturer Part Number: BFG480W,135
• Description: TRANS RF NPN 21GHZ 4.5V SOT343
• Manufacturer: NXP Semiconductors

Specifications of BFG480W,135

• Package / Case: SC-82A, SOT-343
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 4.5V
• Frequency - Transition: 21GHz
• Noise Figure (db Typ @ F): 1.2dB ~ 1.8dB @ 900MHz ~ 2GHz
• Gain: 16dB
• Power - Max: 360mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 80mA, 2V
• Current - Collector (ic) (max): 250mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 40
• Dc Current Gain Hfe Max: 100
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 4.5 V
• Emitter- Base Voltage Vebo: 1 V
• Continuous Collector Current: 250 mA
• Power Dissipation: 360 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
1998 Oct 21
handbook, halfpage
NPN wideband transistor
V
CE
gain
(dB)
Fig.7
= 2 V; f = 2 GHz.
20
16
12
8
4
0
0
Gain as a function of collector current;
typical values.
40
80
G max
S 21
120
I C (mA)
MGR628
160
6
handbook, halfpage
I
C
gain
(dB)
= 80 mA; V
50
40
30
20
10
Fig.8
0
10
CE
Gain as a function of frequency;
typical values.
= 2 V.
10
2
MSG
S 21
10
3
G max
Product specification
f (MHz)
BFG480W
MGR629
10
4