BFG480W,135 NXP Semiconductors, BFG480W,135 Datasheet - Page 4

• Manufacturer Part Number: BFG480W,135
• Description: TRANS RF NPN 21GHZ 4.5V SOT343
• Manufacturer: NXP Semiconductors

Specifications of BFG480W,135

• Package / Case: SC-82A, SOT-343
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 4.5V
• Frequency - Transition: 21GHz
• Noise Figure (db Typ @ F): 1.2dB ~ 1.8dB @ 900MHz ~ 2GHz
• Gain: 16dB
• Power - Max: 360mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 80mA, 2V
• Current - Collector (ic) (max): 250mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 40
• Dc Current Gain Hfe Max: 100
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 4.5 V
• Emitter- Base Voltage Vebo: 1 V
• Continuous Collector Current: 250 mA
• Power Dissipation: 360 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
CHARACTERISTICS
T
Notes
1. G
2. Z
1998 Oct 21
V
V
V
I
h
C
C
C
f
G
F
P
ITO
SYMBOL
j
CBO
T
S
FE
= 25 C unless otherwise specified.
(BR)CBO
(BR)CEO
(BR)EBO
L1
NPN wideband transistor
c
e
re
max
21
S
max
2
is optimized for noise; Z
is the maximum power gain, if K > 1. If K < 1 then G
collector-base breakdown voltage
collector-emitter breakdown voltage I
emitter-base breakdown voltage
collector-base leakage current
DC current gain
collector capacitance
emitter capacitance
feedback capacitance
transition frequency
maximum power gain; note 1
insertion power gain
noise figure
output power at 1 dB gain
compression
third order intercept point
PARAMETER
L
is optimized for gain.
I
I
V
I
I
I
I
see Fig.4
I
T
I
T
I
T
I

I

Class-AB;  < 1 : 2; t
V
I
Z
C
C
E
C
E
C
C
C
C
C
C
C
C
amb
amb
amb
S
S
S
CE
CE
= 100 A; I
= i
= 50 A; I
= 5 mA; I
= 80 mA; V
= i
= 0; V
= 80 mA; V
= 80 mA; V
= 80 mA; V
= 8 mA; V
= 8 mA; V
= 80 mA; V
= 
= 
= Z
= 5 V; V
= 3.6 V; I
e
c
= 25 C; see Fig.5
= 25 C; see Figs 7 and 8
= 25 C; see Fig.8
= 0; V
= 0; V
opt
opt
S opt
4
CB
; see Fig.13
; see Fig.13
; Z
CONDITIONS
max
= 2 V; f = 1 MHz;
B
E
CB
EB
CE
CE
BE
L
= 0
C
CQ
CE
CE
CE
CE
CE
= 0
= MSG; see Figs 6, 7 and 8.
= Z
= 0.5 V; f = 1 MHz
= 0
= 2 V; f = 1 MHz
= 0
= 2 V; f = 900 MHz;
= 2 V; f = 2 GHz;
= 2 V; see Fig.3
= 2 V; f = 2 GHz;
= 2 V; f = 2 GHz;
= 2 V; f = 2 GHz;
= 1 mA; f = 2 GHz
= 2 V; f = 2 GHz;
L opt
p
; note 2
= 5 ms;
14.5
4.5
1

40










MIN.




60
1.4
2.2
340
21
16
12
1.2
1.8
20
28
TYP.
Product specification
BFG480W



70
100










MAX.
V
V
V
nA
pF
pF
fF
GHz
dB
dB
dB
dB
dBm
dBm
UNIT